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Powerex/Mitsubishi Electric Power Semiconductors Expand Worldwide Web Sales

Powerex/Mitsubishi Electric Power Semiconductors Expand Worldwide Web Sales


News Mar 12, 2013 by Jeff Shepard
Transphorm Scales Up to 200-mm Wafers with AIX G5+ GaN-on-Si System from AIXTRON

Transphorm Scales Up to 200-mm Wafers with AIX G5+ GaN-on-Si System from AIXTRON


News Mar 12, 2013 by Jeff Shepard
Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Diodes Incorporated Closes Acquisition of BCD Semiconductor

Diodes Incorporated Closes Acquisition of BCD Semiconductor


News Mar 05, 2013 by Jeff Shepard
SemiSouth Lab’s SiC Manufacturing and Test Equipment to be Sold via Global Webcast Auction

SemiSouth Lab’s SiC Manufacturing and Test Equipment to be Sold via Global Webcast Auction


News Mar 05, 2013 by Jeff Shepard
Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

Transphorm Teams with Yskawa for GaN-based High-Power Converter

Transphorm Teams with Yskawa for GaN-based High-Power Converter


News Feb 26, 2013 by Jeff Shepard
GaN Systems Expands With New Technical Support Office in the UK

GaN Systems Expands With New Technical Support Office in the UK


News Feb 26, 2013 by Jeff Shepard
IXYS Integrates Thyristor and IGBT to offer “Ideal Phase Leg” for Energy-Efficient Applications

IXYS Integrates Thyristor and IGBT to offer “Ideal Phase Leg” for Energy-Efficient Applications

Integrated-FET Buck DC-DCs from Micrel Provide Optimized Solution Costs For 12V Input Rails

Integrated-FET Buck DC-DCs from Micrel Provide Optimized Solution Costs For 12V Input Rails

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

Cree and Eta to Demonstrate High-Efficiency (70%+) GaN-Based Power Amplifier for Mobile Base Stations

Cree and Eta to Demonstrate High-Efficiency (70%+) GaN-Based Power Amplifier for Mobile Base Stations


News Feb 19, 2013 by Jeff Shepard
ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

Mitsubishi to Launch MOSFET-based Super-mini DIPIPM for 3-Phase Inverters

Mitsubishi to Launch MOSFET-based Super-mini DIPIPM for 3-Phase Inverters