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Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

Transphorm Teams with Yskawa for GaN-based High-Power Converter

Transphorm Teams with Yskawa for GaN-based High-Power Converter


News Feb 26, 2013 by Jeff Shepard
GaN Systems Expands With New Technical Support Office in the UK

GaN Systems Expands With New Technical Support Office in the UK


News Feb 26, 2013 by Jeff Shepard
IXYS Integrates Thyristor and IGBT to offer “Ideal Phase Leg” for Energy-Efficient Applications

IXYS Integrates Thyristor and IGBT to offer “Ideal Phase Leg” for Energy-Efficient Applications

Integrated-FET Buck DC-DCs from Micrel Provide Optimized Solution Costs For 12V Input Rails

Integrated-FET Buck DC-DCs from Micrel Provide Optimized Solution Costs For 12V Input Rails

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

Cree and Eta to Demonstrate High-Efficiency (70%+) GaN-Based Power Amplifier for Mobile Base Stations

Cree and Eta to Demonstrate High-Efficiency (70%+) GaN-Based Power Amplifier for Mobile Base Stations


News Feb 19, 2013 by Jeff Shepard
ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

Mitsubishi to Launch MOSFET-based Super-mini DIPIPM for 3-Phase Inverters

Mitsubishi to Launch MOSFET-based Super-mini DIPIPM for 3-Phase Inverters

Alpha and Omega Releases Robust 600V AlphaMOS-II MOSFET Family

Alpha and Omega Releases Robust 600V AlphaMOS-II MOSFET Family

Henkel Electronic Materials and Infineon Jointly-Develop Advanced Thermal-Interface Paste for Modules

Henkel Electronic Materials and Infineon Jointly-Develop Advanced Thermal-Interface Paste for Modules


News Feb 13, 2013 by Jeff Shepard
Mitsubishi Electric Develops 1,200V/1,200A SiC Power Module Technologies

Mitsubishi Electric Develops 1,200V/1,200A SiC Power Module Technologies

U.S. Unveiling of Digital Controller Technology for Solid-State Lighting by Ikon Semiconductor

U.S. Unveiling of Digital Controller Technology for Solid-State Lighting by Ikon Semiconductor

IGBT/MOSFET Gate Drive Coupler from Toshiba Saves Power and Reduces Mounting Area by 50%

IGBT/MOSFET Gate Drive Coupler from Toshiba Saves Power and Reduces Mounting Area by 50%

EPC Development Board Demonstrates Ease of Designing Power Systems with 200V eGaN FETs

EPC Development Board Demonstrates Ease of Designing Power Systems with 200V eGaN FETs


News Feb 05, 2013 by Jeff Shepard
TDK Offers Semiconductor-Embedded-in-Substrate Power Management Module for Smartphones and Tablets

TDK Offers Semiconductor-Embedded-in-Substrate Power Management Module for Smartphones and Tablets

Raytheon Achieves UK First with Opening of New Silicon-Carbide Foundry

Raytheon Achieves UK First with Opening of New Silicon-Carbide Foundry


News Jan 30, 2013 by Jeff Shepard
Toshiba’s Latest MOSFET Intro Adds “DPAK+” Package Suited for High-Speed Switching

Toshiba’s Latest MOSFET Intro Adds “DPAK+” Package Suited for High-Speed Switching