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Infineon Enters the Market for High-Voltage Hyperfast Silicon Diodes

Infineon Enters the Market for High-Voltage Hyperfast Silicon Diodes

Toshiba Debuts 600V Super Junction MOSFET DTMOS IV High Speed Diode Series

Toshiba Debuts 600V Super Junction MOSFET DTMOS IV High Speed Diode Series

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

APEI and GaN Systems Demonstrate High-Efficiency DC-DC Boost Converter with GaN Switch

APEI and GaN Systems Demonstrate High-Efficiency DC-DC Boost Converter with GaN Switch


News Mar 18, 2013 by Jeff Shepard
20-V P-Channel FET in 3.3-mm Square Package with On-Resistance of 4.8 mΩ Added by Vishay

20-V P-Channel FET in 3.3-mm Square Package with On-Resistance of 4.8 mΩ Added by Vishay

Microsemi Adds Multiple Devices to NPT IGBT Product Family

Microsemi Adds Multiple Devices to NPT IGBT Product Family

Powerex/Mitsubishi Electric Power Semiconductors Expand Worldwide Web Sales

Powerex/Mitsubishi Electric Power Semiconductors Expand Worldwide Web Sales


News Mar 12, 2013 by Jeff Shepard
Transphorm Scales Up to 200-mm Wafers with AIX G5+ GaN-on-Si System from AIXTRON

Transphorm Scales Up to 200-mm Wafers with AIX G5+ GaN-on-Si System from AIXTRON


News Mar 12, 2013 by Jeff Shepard
Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Diodes Incorporated Closes Acquisition of BCD Semiconductor

Diodes Incorporated Closes Acquisition of BCD Semiconductor


News Mar 05, 2013 by Jeff Shepard
SemiSouth Lab’s SiC Manufacturing and Test Equipment to be Sold via Global Webcast Auction

SemiSouth Lab’s SiC Manufacturing and Test Equipment to be Sold via Global Webcast Auction


News Mar 05, 2013 by Jeff Shepard
Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

Toshiba Launches 100V Low ON-Resistance N-ch Power MOSFET for Automotive Applications

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

Transphorm Teams with Yskawa for GaN-based High-Power Converter

Transphorm Teams with Yskawa for GaN-based High-Power Converter


News Feb 26, 2013 by Jeff Shepard
GaN Systems Expands With New Technical Support Office in the UK

GaN Systems Expands With New Technical Support Office in the UK


News Feb 26, 2013 by Jeff Shepard
IXYS Integrates Thyristor and IGBT to offer “Ideal Phase Leg” for Energy-Efficient Applications

IXYS Integrates Thyristor and IGBT to offer “Ideal Phase Leg” for Energy-Efficient Applications