New Industry Products

Toshiba Launches 600V System Super-Junction MOSFET DTMOSIV High-Speed Diode Series

April 02, 2013 by Jeff Shepard

Toshiba Corporation has launched high-speed diodes based on the 4th generation 600V system super junction MOSFET "DTMOSIV" series. Using the latest single epitaxial process, the new series has reduced the RON•A (On-resistance per area) by approximately 30% compared to existing products, to achieve the leading level in the industry. Also, high-speed parasitic diodes achieve a reverse recovery time of approximately one-third that of existing products, reducing loss and contributing to improved power efficiency. Applications are expected to include switching power supplies, micro inverters, adaptors and photovoltaic inverters.

Some of the key features of the new MOSFETs include: 30% reduction in RON•A compared with existing products (DTMOSIII series). High-speed parasitic diodes achieve a reverse recovery time of approximately one-third that of existing products. Use of the single epitaxial process secures small increases in ON-resistance and reverse recovery times at high temperatures. Wide line-up for ON-resistances (0.65 to 0.074Ω). Wide line-up of packages.

The first three devices in the new series include: the TK16A60W5 rated for 600V/15.8A with RDS(on) = 0.23 Ohms (with VGS = 10V), typical Qg = 43nC, typical Ciss = 1350pF, typical trr = 100ns, in a TO-220SIS package; the TK31J60W5 rated for 600V/30.8A with RDS(on) = 0.099 Ohms (with VDG = 10V), typical Qg = 105nC, typical Ciss = 3000pF, typical trr = 135ns, in a TO-3P(N) package; and the TK39J60W5 rated for 600V/38.8A with RDS(on) = 0.074 Ohms (with VDG = 10V), typical Qg = 135nC, typical Ciss = 4100pF, typical trr = 150ns, in a TO-3P(N) package.