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High-Temperature SiC Junction Transistors in Hermetic Packages

High-Temperature SiC Junction Transistors in Hermetic Packages

Solderable and Sinterable Top-Side Bonding for High-Power IGBT Wafers

Solderable and Sinterable Top-Side Bonding for High-Power IGBT Wafers

Asymmetric Package Optimizes Low-Side MOSFET RDS(on) for Synchronous DC-DCs

Asymmetric Package Optimizes Low-Side MOSFET RDS(on) for Synchronous DC-DCs

Split-Output Topology Improves Dynamic Behavior in SiC MOSFET Modules

Split-Output Topology Improves Dynamic Behavior in SiC MOSFET Modules

-20V P-Channel Gen III MOSFET is First in CSP MICRO FOOT Package

-20V P-Channel Gen III MOSFET is First in CSP MICRO FOOT Package

Transphorm and Fujitsu to Integrate GaN Power Device Businesses

Transphorm and Fujitsu to Integrate GaN Power Device Businesses


News Dec 01, 2013 by Jeff Shepard
Soraa Expands Its GaN-on-GaN Manufacturing Operations In U.S.

Soraa Expands Its GaN-on-GaN Manufacturing Operations In U.S.


News Nov 20, 2013 by Jeff Shepard
SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

Amantys brings Insight and Performance Monitoring to IGBT Module Systems

Amantys brings Insight and Performance Monitoring to IGBT Module Systems

Transphorm’s 600V GaN Power Conversion Adopted by Delta Electronics

Transphorm’s 600V GaN Power Conversion Adopted by Delta Electronics


News Nov 13, 2013 by Jeff Shepard
Toshiba Adds Three Miniature Packages to Automotive MOSFET Portfolio

Toshiba Adds Three Miniature Packages to Automotive MOSFET Portfolio

Silicon Carbide Bare Die up to 8000V from GeneSiC

Silicon Carbide Bare Die up to 8000V from GeneSiC

ON Semiconductor Reports Increases in Revenue and Income

ON Semiconductor Reports Increases in Revenue and Income


News Nov 04, 2013 by Jeff Shepard
Monolithic Power Aims for Si / SiC Cost Parity within 4 Years

Monolithic Power Aims for Si / SiC Cost Parity within 4 Years


News Nov 04, 2013 by Jeff Shepard
High-Speed Four-Channel MOSFET Driver Optimized for Medical Ultrasound Applications

High-Speed Four-Channel MOSFET Driver Optimized for Medical Ultrasound Applications

Kyma Technologies Selected by ARPA-E for GaN Substrate Development

Kyma Technologies Selected by ARPA-E for GaN Substrate Development


News Nov 03, 2013 by Jeff Shepard
Avogy Gets Multiple DOE Awards to Develop Vertical GaN Transistors

Avogy Gets Multiple DOE Awards to Develop Vertical GaN Transistors


News Nov 03, 2013 by Jeff Shepard
Anvil Drops the Hammer on £1m to Develop Low-Cost SiC Power Devices

Anvil Drops the Hammer on £1m to Develop Low-Cost SiC Power Devices


News Oct 31, 2013 by Jeff Shepard
IXYS Releases New 600A 650V IGBT Module Based On XPT IGBT Technology

IXYS Releases New 600A 650V IGBT Module Based On XPT IGBT Technology

Thin-film PV achieves 20.8% Efficiency and overtakes Multicrystalline Silicon Technology

Thin-film PV achieves 20.8% Efficiency and overtakes Multicrystalline Silicon Technology


News Oct 23, 2013 by Jeff Shepard