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Silicon Carbide Bare Die up to 8000V from GeneSiC

Silicon Carbide Bare Die up to 8000V from GeneSiC

ON Semiconductor Reports Increases in Revenue and Income

ON Semiconductor Reports Increases in Revenue and Income


News Nov 04, 2013 by Jeff Shepard
Monolithic Power Aims for Si / SiC Cost Parity within 4 Years

Monolithic Power Aims for Si / SiC Cost Parity within 4 Years


News Nov 04, 2013 by Jeff Shepard
High-Speed Four-Channel MOSFET Driver Optimized for Medical Ultrasound Applications

High-Speed Four-Channel MOSFET Driver Optimized for Medical Ultrasound Applications

Kyma Technologies Selected by ARPA-E for GaN Substrate Development

Kyma Technologies Selected by ARPA-E for GaN Substrate Development


News Nov 03, 2013 by Jeff Shepard
Avogy Gets Multiple DOE Awards to Develop Vertical GaN Transistors

Avogy Gets Multiple DOE Awards to Develop Vertical GaN Transistors


News Nov 03, 2013 by Jeff Shepard
Anvil Drops the Hammer on £1m to Develop Low-Cost SiC Power Devices

Anvil Drops the Hammer on £1m to Develop Low-Cost SiC Power Devices


News Oct 31, 2013 by Jeff Shepard
IXYS Releases New 600A 650V IGBT Module Based On XPT IGBT Technology

IXYS Releases New 600A 650V IGBT Module Based On XPT IGBT Technology

Thin-film PV achieves 20.8% Efficiency and overtakes Multicrystalline Silicon Technology

Thin-film PV achieves 20.8% Efficiency and overtakes Multicrystalline Silicon Technology


News Oct 23, 2013 by Jeff Shepard
Silicon-based Supercapacitors can be Integrated into Silicon Wafers

Silicon-based Supercapacitors can be Integrated into Silicon Wafers


News Oct 23, 2013 by Jeff Shepard
Toshiba Adds Lower-Current Devices to SiC Schottky Offering

Toshiba Adds Lower-Current Devices to SiC Schottky Offering

Soraa Gets More DOE Funding For Development of Bulk GaN Substrates

Soraa Gets More DOE Funding For Development of Bulk GaN Substrates


News Oct 22, 2013 by Jeff Shepard
Fairchild Semiconductor to Switch Stock Exchange Listing to NASDAQ on October 31

Fairchild Semiconductor to Switch Stock Exchange Listing to NASDAQ on October 31


News Oct 20, 2013 by Jeff Shepard
High-Speed IGBT H-Bridge Modules Built to Boost Performance

High-Speed IGBT H-Bridge Modules Built to Boost Performance

650V SiC Schottky Improves Performance in High-power Industrial Applications

650V SiC Schottky Improves Performance in High-power Industrial Applications

Silicon Labs Claims most Energy-Friendly MCUs Based on the ARM Cortex-M0+ Core

Silicon Labs Claims most Energy-Friendly MCUs Based on the ARM Cortex-M0+ Core

GaN Systems appoints Vqdot as Applications Development Partner

GaN Systems appoints Vqdot as Applications Development Partner


News Oct 07, 2013 by Jeff Shepard
EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

High-Side, High-Frequency FET Gate Driver Features -55°C to 150°C Operation

Showa Denko to launch 6-inch SiC Epitaxial Wafers for Power Devices

Showa Denko to launch 6-inch SiC Epitaxial Wafers for Power Devices


News Sep 29, 2013 by Jeff Shepard