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P-Channel MOSFET claims Lowest RDS(ON) in Its Class

P-Channel MOSFET claims Lowest RDS(ON) in Its Class

IGBT Modules claim Maximum Efficiency and Reduced Power Loss

IGBT Modules claim Maximum Efficiency and Reduced Power Loss

Podcast Series on GaN Power Transistors for Power Designers

Podcast Series on GaN Power Transistors for Power Designers

Two-Watt DC-DCs for “High/Low” Side IGBT Drive Applications

Two-Watt DC-DCs for “High/Low” Side IGBT Drive Applications

GaN Development Board for High-Current, High Step-Down IBCs

GaN Development Board for High-Current, High Step-Down IBCs


News Apr 17, 2014 by Jeff Shepard
IXYS Introduces First 6.5kV 285A Press-Pack IGBT

IXYS Introduces First 6.5kV 285A Press-Pack IGBT

Driver plus Sync FET 40A Power Solution for High-Performance FPGAs

Driver plus Sync FET 40A Power Solution for High-Performance FPGAs

IQE enables MACOM to deliver GaN Performance at 8-inch Silicon Cost Structure

IQE enables MACOM to deliver GaN Performance at 8-inch Silicon Cost Structure


News Apr 02, 2014 by Jeff Shepard
High Megawatt 3-level IGBT Inverter Stacks drawing Market Interest

High Megawatt 3-level IGBT Inverter Stacks drawing Market Interest


News Apr 02, 2014 by Jeff Shepard
Synchronous Forward MOSFET Driver eliminates Signal Transformer

Synchronous Forward MOSFET Driver eliminates Signal Transformer

Integrated Microwave-Controlled Ultra Compact GaN Motor Drive

Integrated Microwave-Controlled Ultra Compact GaN Motor Drive


News Mar 27, 2014 by Jeff Shepard
IGBT-Based Medium-Voltage Soft Starter Supports High Starting Torques

IGBT-Based Medium-Voltage Soft Starter Supports High Starting Torques

Dual IGBT Gate Driver also Targets SiC MOSFETs

Dual IGBT Gate Driver also Targets SiC MOSFETs

Wide-Body IGBT/MOSFET Driver features 10 mm External Creepage

Wide-Body IGBT/MOSFET Driver features 10 mm External Creepage

Toshiba Launches 600V Super Junction MOSFET DTMOS IV-H Series

Toshiba Launches 600V Super Junction MOSFET DTMOS IV-H Series

IGBT Driver Cores with Integrated Short-Circuit Soft Shutdown

IGBT Driver Cores with Integrated Short-Circuit Soft Shutdown

Jim Witham in as CEO at GaN Systems

Jim Witham in as CEO at GaN Systems


News Mar 16, 2014 by Jeff Shepard
600-V GaN-on-Silicon Device offering Expanded

600-V GaN-on-Silicon Device offering Expanded

SiC MOSFETs Rated for 200 Degrees C from STMicro

SiC MOSFETs Rated for 200 Degrees C from STMicro

100V FastIRFET PQFN 5x6 Power MOSFET targets Telecom D2Ds

100V FastIRFET PQFN 5x6 Power MOSFET targets Telecom D2Ds