EPC to Present Multiple Papers on GaN Technology at PCIM 2014

May 11, 2014 by Power Pulse1595211359

Efficient Power Conversion Corporation will be presenting three application-focused technical presentations at PCIM Europe. The conference will be held in Nuremberg, Germany from May 20th through the 22th. Participants attending EPC sessions will learn about the enabling capability of eGaN FETs in 10-MHz buck converters for envelope tracking, how a novel new topology featuring eGaN FETs increases efficiency in wireless power transfer by 20%, and how an optimized parallel layout of eGaN power transistors achieves efficiencies above 96.5% in a 480-W converter. During the conference EPC's CEO, Alex Lidow, will participate in two industry expert panel discussions on the accelerated adoption of wide band gap semiconductors like gallium nitride in a vast array of applications.

“We are honored that the technical review committee of PCIM Europe has selected EPC experts to give technical papers focusing on GaN technology. This selection supports our belief that the superior performance of GaN technology has gained the interest and acceptance of power system design engineers around the world,” said Alex Lidow, EPC’s co-founder and CEO.

Technical presentations featuring GaN FETs by EPC experts will include: “Multi Megahertz Buck Converters Using eGaN® FETs for Envelope Tracking,” by Johan Strydom on Tuesday, May 20, Poster Dialogue Session 3:30 – 5:00 PM; “Improving Performance of High Speed GaN Transistors Operating in Parallel for High Current Applications” by David Reush on Wednesday, May 21 at 10:00 AM;“eGaN® FET Based Wireless Energy Transfer Topology Performance” by Michael de Rooij on Thursday, May 22 at 10:30 AM; Podium Discussion: “Mature Wide Band Gap Semiconductors” by Alex Lidow on Wednesday, May 21 from 12:20 – 1:20 PM; and “Si vs. SiC/GaN – Competition or Coexistence” by Alex Lidow on Wednesday, May 21 from 2.00 – 4.00 PM.