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Toshiba Launches 600V Super Junction MOSFET DTMOS IV-H Series

Toshiba Launches 600V Super Junction MOSFET DTMOS IV-H Series

IGBT Driver Cores with Integrated Short-Circuit Soft Shutdown

IGBT Driver Cores with Integrated Short-Circuit Soft Shutdown

Jim Witham in as CEO at GaN Systems

Jim Witham in as CEO at GaN Systems


News Mar 16, 2014 by Jeff Shepard
600-V GaN-on-Silicon Device offering Expanded

600-V GaN-on-Silicon Device offering Expanded

SiC MOSFETs Rated for 200 Degrees C from STMicro

SiC MOSFETs Rated for 200 Degrees C from STMicro

100V FastIRFET PQFN 5x6 Power MOSFET targets Telecom D2Ds

100V FastIRFET PQFN 5x6 Power MOSFET targets Telecom D2Ds

Silicon Labs Acquires Touchstone IoT Low-Power Analog IC Products

Silicon Labs Acquires Touchstone IoT Low-Power Analog IC Products


News Mar 04, 2014 by Jeff Shepard
Cree extends Benefits of SiC Diodes to MW-Class Power Systems

Cree extends Benefits of SiC Diodes to MW-Class Power Systems

Driver ICs target GaN and SiC Power Transistors

Driver ICs target GaN and SiC Power Transistors

Ultra-fast 1400V IGBT Optimized for Induction Heating and Soft Switching

Ultra-fast 1400V IGBT Optimized for Induction Heating and Soft Switching

TSI Semiconductors Expands Portfolio with IBM Power Management Tech

TSI Semiconductors Expands Portfolio with IBM Power Management Tech


News Feb 24, 2014 by Jeff Shepard
Reverse-Conducting IGBT Optimized for Induction Cooking Applications

Reverse-Conducting IGBT Optimized for Induction Cooking Applications

Vincotech adds SiC Modules for Advanced Power Conversion

Vincotech adds SiC Modules for Advanced Power Conversion

GaN Systems appoints Tony Astley as Director European Operations

GaN Systems appoints Tony Astley as Director European Operations


News Feb 18, 2014 by Jeff Shepard
Powerex SiC Modules Attain RoHS Compliance

Powerex SiC Modules Attain RoHS Compliance

MACOM Acquires Nitronex Gets GaN-on-Si Technology

MACOM Acquires Nitronex Gets GaN-on-Si Technology


News Feb 13, 2014 by Jeff Shepard
Multi-MegaWatt 3-Level Press-Pack IGBT Inverter Stacks

Multi-MegaWatt 3-Level Press-Pack IGBT Inverter Stacks

High-Current GaN Development Board Features Multiple Half-Bridges in Parallel

High-Current GaN Development Board Features Multiple Half-Bridges in Parallel


News Feb 02, 2014 by Jeff Shepard
Toshiba Extends Ultra-Efficient, High-Speed SMD MOSFET Family to 250V

Toshiba Extends Ultra-Efficient, High-Speed SMD MOSFET Family to 250V

GaN Wafers from Ammono to be used in Two ARPA-E Projects

GaN Wafers from Ammono to be used in Two ARPA-E Projects


News Jan 22, 2014 by Jeff Shepard