EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
EPC announces the EPC2104, 100 V enhancement-mode monolithic GaN transistor half bridge.
Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.
Infineon Technologies AG announced the expansion of its Gallium Nitride (GaN)-on-Silicon technology and product portfolio.
The first PCIM I remember back in the late 80s was in a hotel in Munich and the exhibition was on table tops in the…
The first PCIM I remember back in the late 80s was in a hotel in Munich and the exhibition was on table tops in the parking garage. Can you…
SEMICONDUCTORS WSTS reports that the world semiconductor market showed a solid growth of almost 10 percent up to $ 336…
SEMICONDUCTORS WSTS reports that the world semiconductor market showed a solid growth of almost 10 percent up to $ 336 billion in 2014, driven mainly
Digital power technology has entered its second decade. Last year’s Darnell Power Forum (DPF ’14) marked the…
Digital power technology has entered its second decade. Last year’s Darnell Power Forum (DPF ’14) marked the tenth-anniversary of that event.…
This article discusses the advantages of Infineon's 5th generation of 1700V IGBT with .XT technology and emitter…
This article discusses the advantages of Infineon's 5th generation of 1700V IGBT with .XT technology and emitter controlled diode for inverter…
This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module…
This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module solution to achieve high…
This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the…
This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the cascode implementation
This article introduces Fuji's 7th generation IGBT modules and their improvements in current and power density and power…
This article introduces Fuji's 7th generation IGBT modules and their improvements in current and power density and power cycling and thermal…
This article describes a high power IGBT module for electric and hybrid electric vehicle inverters and offers technical…
This article describes a high power IGBT module for electric and hybrid electric vehicle inverters and offers technical concepts and benefits.
This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and…
This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and improved performance.
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an…
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an advanced SiC manufacturing…
This article offers a highly integrated solution of improving inverter protection with the use of Toshiba's TLP5214 smart…
This article offers a highly integrated solution of improving inverter protection with the use of Toshiba's TLP5214 smart gate-driver.
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