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TI enters Strategic Relationship with Silicon Catalyst

TI enters Strategic Relationship with Silicon Catalyst


News Aug 24, 2016 by Jeff Shepard
Silicon may Replace Graphite in Li-ions

Silicon may Replace Graphite in Li-ions


News Aug 24, 2016 by Jeff Shepard
IPM with SiC Boost Diode for 150kHz Operation

IPM with SiC Boost Diode for 150kHz Operation

Mitsubishi Launches Super-mini Full SiC DIPIPM

Mitsubishi Launches Super-mini Full SiC DIPIPM

DC Link Film Capacitor for New IGBT Modules

DC Link Film Capacitor for New IGBT Modules

1-GHz Optically-Isolated Measurements for GaN and SiC

1-GHz Optically-Isolated Measurements for GaN and SiC

GaN Powers Next-Generation Missile Defense

GaN Powers Next-Generation Missile Defense


News Aug 15, 2016 by Jeff Shepard
Evaluating Silver Sintering as a Reliable Die-Attach Material for Automotive Power Module Applications

Evaluating Silver Sintering as a Reliable Die-Attach Material for Automotive Power Module Applications

This article discusses the benefits of double-sided silver-sintering technology and demonstrate the superiority over conventional solder.


Introduction of a Wireless Multi-Mode Demonstration System

Introduction of a Wireless Multi-Mode Demonstration System

This article introduces Efficient Power Conversion Corporation's EPC9121, a 10W multi-mode wireless power charging kit for power charging…


new products Aug 09, 2016 by EPC
Collaborative Approach to Overhaul Motor Inverters

Collaborative Approach to Overhaul Motor Inverters

This article discusses approaches to overhaul motor inverters.


Buck/Boost Controller with Integrated Buck FET

Buck/Boost Controller with Integrated Buck FET

1500V Super-Junction FET in TO-220FP Wide-Creepage Package

1500V Super-Junction FET in TO-220FP Wide-Creepage Package

Mouser Signs Global Agreement with Torex Semiconductor

Mouser Signs Global Agreement with Torex Semiconductor


News Aug 01, 2016 by Jeff Shepard
Increasing Reliability Data for GaN Devices

Increasing Reliability Data for GaN Devices

New Material may Exceed GaN Performance

New Material may Exceed GaN Performance


News Jul 28, 2016 by Jeff Shepard
Gate Drivers for IGBTs and SiC MOSFETs

Gate Drivers for IGBTs and SiC MOSFETs

Taiyo Yuden gets GE IP for Si, SiC and GaN Embedded Circuits

Taiyo Yuden gets GE IP for Si, SiC and GaN Embedded Circuits


News Jul 27, 2016 by Jeff Shepard
Discrete and Bare Die IGBTs for Hybrid and All-Electric Vehicles

Discrete and Bare Die IGBTs for Hybrid and All-Electric Vehicles

Fairchild expanding its growing portfolio of automotive-grade semiconductor solutions for hybrid electric vehicles (HEV), plug-in hybrid electric…


High-Reliability SCALE2 Driver Technology to 1200 V Applications

High-Reliability SCALE2 Driver Technology to 1200 V Applications

Power Integrations announced a family of galvanically isolated single-channel gate driver ICs ranging in output current from 2.5 A to 8 A


LinPak, the Standard Expands to 3300V and Shows Excellent Parallel Operation as well as SiC Readiness

LinPak, the Standard Expands to 3300V and Shows Excellent Parallel Operation as well as SiC Readiness

This article presents general module design considerations and first results on switching characteristics of LinPaks in different configurations.