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Efficient Reliable Power Solutions for Industrial and Consumer Applications

Efficient Reliable Power Solutions for Industrial and Consumer Applications

Over a decade ago, Power Integrations launched its LinkSwitch™-TN IC product family which has proved highly successful. Now the company has…


GaN Enables Wireless Power Modules to Replace Connectors

GaN Enables Wireless Power Modules to Replace Connectors

EPC to Show Applications Enabled by GaN at CES

EPC to Show Applications Enabled by GaN at CES

200µm-Thick Thermal Material for IGBT Modules

200µm-Thick Thermal Material for IGBT Modules

Choice between Si, SiC and GaN Growing in Complexity

Choice between Si, SiC and GaN Growing in Complexity


News Dec 21, 2016 by Jeff Shepard
IEEE Energy Conversion Congress and ExpoECCE 2016

IEEE Energy Conversion Congress and ExpoECCE 2016

ECCE, the foremost IEEE conference in the field of electrical and electromechanical energy conversion provided an international audience the…


tech insights Dec 21, 2016 by Gary Dolny
System Level Impact of GaN in Server Architectures

System Level Impact of GaN in Server Architectures


News Dec 20, 2016 by Jeff Shepard
400V Vertical GaN Transistor Switches 15A in 40ns

400V Vertical GaN Transistor Switches 15A in 40ns


News Dec 19, 2016 by Jeff Shepard
SiC Technology Introduced into Formula E

SiC Technology Introduced into Formula E

ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong.


new products Dec 19, 2016 by ROHM
The Rugged 62Pak IGBT Module Range Employing the Next Generation 1700V SPT Chip Set for 175C Operation

The Rugged 62Pak IGBT Module Range Employing the Next Generation 1700V SPT Chip Set for 175C Operation

This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max temperature of 175˚C.


Transphorm’s Fully-Packaged GaN FETs Available Through Digi-Key

Transphorm’s Fully-Packaged GaN FETs Available Through Digi-Key


News Dec 15, 2016 by Jeff Shepard
Miniaturization with High-Temperature Surface-Mount Silicon Controlled Rectifiers

Miniaturization with High-Temperature Surface-Mount Silicon Controlled Rectifiers

STMicroelectronics has introduced the industry’s first 800V surface-mount Silicon Controlled Rectifiers (SCR, or thyristor) specified for…


Atomera to Discuss Semiconductor Materials Advancements

Atomera to Discuss Semiconductor Materials Advancements

Next-Generation Output Transistor Arrays

Next-Generation Output Transistor Arrays

Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET type sink output.


Fabless Actions Semiconductor Going Private

Fabless Actions Semiconductor Going Private


News Dec 12, 2016 by Jeff Shepard
Technology Trends Raising Power-Conversion Efficiency

Technology Trends Raising Power-Conversion Efficiency

This article discusses the advances in superjunction MOSFETs and SiC Rectifiers and how they can improve on-resistance and noise of power supply…


£10 Million Award Creates Compound Semiconductor Hub

£10 Million Award Creates Compound Semiconductor Hub


News Dec 06, 2016 by Jeff Shepard
InSe Semiconductors Could Extend Life of Moore’s Law

InSe Semiconductors Could Extend Life of Moore’s Law


News Dec 06, 2016 by Jeff Shepard
Reverse Conducting IGCT Platform optimized for Modular Multilevel Converters MMC

Reverse Conducting IGCT Platform optimized for Modular Multilevel Converters MMC

This article discusses the technical aspects of ABB's newly developed Reverse Conducting Integrated Gate Commutated Thyristor (RC-IGCT) platform.


3D Solutions to Energy Savings in Silicon IGBTs

3D Solutions to Energy Savings in Silicon IGBTs


News Dec 04, 2016 by Jeff Shepard