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Multilevel GaN Converter from AT&S and Fraunhofer

Multilevel GaN Converter from AT&S and Fraunhofer

News Apr 25, 2017 by Jeff Shepard
Announcing Collaboration Sales in Japan

Announcing Collaboration Sales in Japan

ROHM and SEMIKRON will kick-off collaboration sales of SiC power devices and modules, to contribute to the innovative evolution of the Japanese…

new products Apr 24, 2017 by ROHM
Semiconductor Test Solution for IoT Connectivity

Semiconductor Test Solution for IoT Connectivity

new products Apr 23, 2017 by Jeff Shepard
ROHM Expands its Range of SiC and Si Power Devices

ROHM Expands its Range of SiC and Si Power Devices

News Apr 20, 2017 by Power Pulse1595211359
Transphorm’s 900V GaN Switch Assisted by PowerAmerica Money

Transphorm’s 900V GaN Switch Assisted by PowerAmerica Money

News Apr 19, 2017 by Jeff Shepard
IPM Solution for Low Rated Power Application

IPM Solution for Low Rated Power Application

This article proposed and discussed the thermal and circuit benefits of a low rated power application without heat-sink approach using 600V 4A…

Technical Articles Apr 19, 2017 by Pengwei Sun, Infineon
T-Series IGBT Modules Lineup Expansion to 1700V

T-Series IGBT Modules Lineup Expansion to 1700V

Mitsubishi Electric Corporation will continue the expansion of its successfully launched T-series power semiconductor modules by introduction and…

new products Apr 14, 2017 by Mitsubishi Electric
Millions of GaN Device Hours with Zero Failures

Millions of GaN Device Hours with Zero Failures

News Apr 12, 2017 by Jeff Shepard
40V / 0.65mΩ FET Packaged for Battery-Powered Designs

40V / 0.65mΩ FET Packaged for Battery-Powered Designs

new products Apr 12, 2017 by Jeff Shepard
Active OR’ing MOSFET Controller Supports up to 400V

Active OR’ing MOSFET Controller Supports up to 400V

new products Apr 12, 2017 by Jeff Shepard
Evaluating the Effect of High Switching Frequency on the Performance of an Active Front End Converter

Evaluating the Effect of High Switching Frequency on the Performance of an Active Front End Converter

This article features the benefits of operating at high frequencies and the impact of dead-time and inductance value on both operation and control…

Technical Articles Apr 12, 2017 by Jon Woodhead
10A 4000V Dual-Channel Isolated Gate-Driver

10A 4000V Dual-Channel Isolated Gate-Driver

IXYS Corporation announced a 10A/4000V, dual-channel, isolated gate-driver: IXIDM1401_1505_O

new products Apr 11, 2017 by IXYS
Highly Versatile DrMOS Power Module

Highly Versatile DrMOS Power Module

Alpha and Omega Semiconductor introduced AOZ5038QI, the highly versatile latest generation of power modules. The AOZ5038QI integrates a dual gate…

new products Apr 11, 2017 by Alpha and Omega Semiconductor
Reliable GaN Switches for Datacenter and Telecom Power

Reliable GaN Switches for Datacenter and Telecom Power

new products Apr 09, 2017 by Jeff Shepard
6-GHz GaN Power Amplifier Modules

6-GHz GaN Power Amplifier Modules

new products Apr 09, 2017 by Jeff Shepard
Third-Generation SiC MOSFET Platform expanded to 1200V

Third-Generation SiC MOSFET Platform expanded to 1200V

Wolfspeed expands its innovative C3M™ platform through the introduction of 1200V, 75mΩ MOSFET in low-inductance discrete packaging

new products Apr 07, 2017 by Wolfspeed
SiC at Japan’s Synchrotron Radiation Research Institute

SiC at Japan’s Synchrotron Radiation Research Institute

News Apr 06, 2017 by Jeff Shepard
Ballistic Missile System to get GaN Upgrade

Ballistic Missile System to get GaN Upgrade

News Apr 06, 2017 by Jeff Shepard
1200V Silicon-Carbide Schottky Rectifiers in DPAK-2L

1200V Silicon-Carbide Schottky Rectifiers in DPAK-2L

new products Apr 06, 2017 by Jeff Shepard
11mOhm, 30V FET Increases Power Density and Efficiency

11mOhm, 30V FET Increases Power Density and Efficiency

new products Apr 05, 2017 by Jeff Shepard