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RF MLCCs Rated to +200 C Target SiC and GaN Designs

RF MLCCs Rated to +200 C Target SiC and GaN Designs

GaN Power Amplifiers feature Low Noise High Gain

GaN Power Amplifiers feature Low Noise High Gain

Cesium-Tin-Oxide Wires - A Semiconductor That Blocks Heat Transfer

Cesium-Tin-Oxide Wires - A Semiconductor That Blocks Heat Transfer


News Aug 07, 2017 by Paul Shepard
Current Progress at Si IGBTs in the Voltage Range up to 1200V

Current Progress at Si IGBTs in the Voltage Range up to 1200V

In recent years the basic features introduced at the turn of the millennium for IGBTs such as trench gate cell and field stop layers could be…


Showa Denko Acquires Assets Related to SiC for Power Devices

Showa Denko Acquires Assets Related to SiC for Power Devices


News Aug 06, 2017 by Paul Shepard
HiPak Modules in Chopper Configuration for 3300V and 4500V

HiPak Modules in Chopper Configuration for 3300V and 4500V

This article introduces the features and information on the ABB's new Chopper modules added to its HiPak family for varying demanding…


new products Aug 02, 2017 by ABB
PCIM Asia 2017 – Breaking New Ground

PCIM Asia 2017 – Breaking New Ground

This article discusses the PCIM Asia 2017 at Shanghai World Expo Exhibition and Convention Center last June 27 to 29, 2017.


Side Wall Gate - Moving on from Trench

Side Wall Gate - Moving on from Trench

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.


Half-Bridge FET Drivers for Automotive High-Power Inductive Loads

Half-Bridge FET Drivers for Automotive High-Power Inductive Loads

Carbon-Doping Not Needed to Achieve High-Isolation GaN-on-Si

Carbon-Doping Not Needed to Achieve High-Isolation GaN-on-Si


News Jul 31, 2017 by Paul Shepard
IoT Growth Drives Record Q2 Revenue at Silicon Labs

IoT Growth Drives Record Q2 Revenue at Silicon Labs


News Jul 28, 2017 by Paul Shepard
Debut of High Performance HV MOSFET aMOS5 Platform

Debut of High Performance HV MOSFET aMOS5 Platform

Alpha and Omega Semiconductor Limited (AOS) (Nasdaq: AOSL), a designer, developer and global supplier of a broad range of power semiconductors and…


Linear FET Delivers Low RDS(on) Plus Large SOA

Linear FET Delivers Low RDS(on) Plus Large SOA

W-Band GaN Transmitters Enable Longer Range / Higher Bandwidth

W-Band GaN Transmitters Enable Longer Range / Higher Bandwidth


News Jul 24, 2017 by Paul Shepard
Next-Generation SiC Platform for 6-inch Wafers

Next-Generation SiC Platform for 6-inch Wafers


News Jul 20, 2017 by Paul Shepard
Hermetic, Dynamic Load Balancing, Press-pack IGBT

Hermetic, Dynamic Load Balancing, Press-pack IGBT

BMW i Ventures makes Strategic Investment in GaN Systems

BMW i Ventures makes Strategic Investment in GaN Systems


News Jul 19, 2017 by Paul Shepard
Investigating Losses of GaN-HFETs in a Synchronous Buck Converter

Investigating Losses of GaN-HFETs in a Synchronous Buck Converter

This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the losses in eGaNTM FETs.


Creating Many Thin Layers from a Single GaN Wafer

Creating Many Thin Layers from a Single GaN Wafer


News Jul 14, 2017 by Paul Shepard
Ultra-Fast Switching with 1200V SiC Schottky

Ultra-Fast Switching with 1200V SiC Schottky