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80A Discrete Bidirectional TVS Diode Array Added with Lower Standoff Voltages to Protect Lower Voltage Power Buses

80A Discrete Bidirectional TVS Diode Array Added with Lower Standoff Voltages to Protect Lower Voltage Power Buses

Littelfuse, Inc., the global leader in circuit protection, today introduced 80A discrete bidirectional TVS Diode Arrays as the latest addition to…


new products Aug 21, 2017 by Littelfuse
Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

This article talks about the interview with Gene Sheridan from Navitas Semiconductors on GaN Technology.


Important Parameters in Choosing an Digital Storage Oscilloscopes (DSO) - Part 2

Important Parameters in Choosing an Digital Storage Oscilloscopes (DSO) - Part 2

This article discusses the important parameters to remember in choosing the right digital storage oscilloscope for designing and testing circuitry.


DC-DC Converters for Driving Next-Gen SiC MOSFETs

DC-DC Converters for Driving Next-Gen SiC MOSFETs

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica


News Aug 17, 2017 by Paul Shepard
High-Purity Silicon Carbide Technology Platform for SiC Power Devices

High-Purity Silicon Carbide Technology Platform for SiC Power Devices


News Aug 16, 2017 by Paul Shepard
Ultrafast RF MOSFET Driver Supports 8ns Pulse Widths

Ultrafast RF MOSFET Driver Supports 8ns Pulse Widths

Electric Power Research Institute Funds GRAPES SiC Project

Electric Power Research Institute Funds GRAPES SiC Project


News Aug 15, 2017 by Paul Shepard
Enhanced LTSpice Model Simplifies Designing with GaN

Enhanced LTSpice Model Simplifies Designing with GaN


News Aug 15, 2017 by Paul Shepard
SunPower Unveils Silicon Valley Pilot Line for High-Efficiency Solar Panels

SunPower Unveils Silicon Valley Pilot Line for High-Efficiency Solar Panels


News Aug 14, 2017 by Paul Shepard
80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

Wolfspeed, A Cree Company announces that it has advanced the development of high efficiency data center power supplies through the implementation…


new products Aug 11, 2017 by Wolfspeed
Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

8-Bit MCUs for IGBT Control

8-Bit MCUs for IGBT Control

SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power


News Aug 10, 2017 by Paul Shepard
GaN Gives Radar 360 Degree Threat Detection Ability

GaN Gives Radar 360 Degree Threat Detection Ability


News Aug 08, 2017 by Paul Shepard
II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.


News Aug 07, 2017 by Paul Shepard
RF MLCCs Rated to +200 C Target SiC and GaN Designs

RF MLCCs Rated to +200 C Target SiC and GaN Designs

GaN Power Amplifiers feature Low Noise High Gain

GaN Power Amplifiers feature Low Noise High Gain

Cesium-Tin-Oxide Wires - A Semiconductor That Blocks Heat Transfer

Cesium-Tin-Oxide Wires - A Semiconductor That Blocks Heat Transfer


News Aug 07, 2017 by Paul Shepard
Current Progress at Si IGBTs in the Voltage Range up to 1200V

Current Progress at Si IGBTs in the Voltage Range up to 1200V

In recent years the basic features introduced at the turn of the millennium for IGBTs such as trench gate cell and field stop layers could be…