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Dialog Semiconductor to Acquire Silego Technology

Dialog Semiconductor to Acquire Silego Technology


News Oct 05, 2017 by Paul Shepard
Infineon GaN Switches enable 98% Efficient 3kW AC-DCs from Eltek

Infineon GaN Switches enable 98% Efficient 3kW AC-DCs from Eltek


News Oct 05, 2017 by Paul Shepard
Sub-Threshold P-Channel MOSFET Arrays for Ultra-Low Power Applications

Sub-Threshold P-Channel MOSFET Arrays for Ultra-Low Power Applications

GaN Systems and Taiwan’s MOEA to Collaborate on GaN Commercialization

GaN Systems and Taiwan’s MOEA to Collaborate on GaN Commercialization


News Oct 03, 2017 by Paul Shepard
SiC MOSFET Provides Ultra-Fast Switching in Power Electronics

SiC MOSFET Provides Ultra-Fast Switching in Power Electronics

Littelfuse, Inc. introduces its first series of silicon carbide (SiC) MOSFETs, the latest addition to the company’s growing power semiconductor line


new products Oct 03, 2017 by Littelfuse
1200V SiC FET Provides Ultra-Fast Switching and Enhanced Robustness

1200V SiC FET Provides Ultra-Fast Switching and Enhanced Robustness

PPM Power Signs Power Modules and SiC Agreement with SanRex

PPM Power Signs Power Modules and SiC Agreement with SanRex


News Sep 30, 2017 by Paul Shepard
High-Power / Surface-Mount N-Channel JFET

High-Power / Surface-Mount N-Channel JFET

N-channel FET Drivers for Mobile and Consumer Applications

N-channel FET Drivers for Mobile and Consumer Applications

Industrial ATX Power with Digital Control, SiC Rectifiers and Remote Monitoring

Industrial ATX Power with Digital Control, SiC Rectifiers and Remote Monitoring

Gate Driver Applications For Infineon’s CoolSiC™ MOSFET

Gate Driver Applications For Infineon’s CoolSiC™ MOSFET

This article discusses the advantages of SiC T-MOSFET compared to the conventional IGBT in terms of power savings and heatsink size reduction.


Dr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research

Dr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research


News Sep 27, 2017 by Paul Shepard
Sixth-Generation 650V SiC Schottky Diodes have Faster Switching

Sixth-Generation 650V SiC Schottky Diodes have Faster Switching

Mitsubishi Develops SiC Power Device with Record Power Efficiency

Mitsubishi Develops SiC Power Device with Record Power Efficiency


News Sep 21, 2017 by Paul Shepard
GaN FETs enable Reimagining Servos through Redesigned Power Electronics

GaN FETs enable Reimagining Servos through Redesigned Power Electronics


News Sep 20, 2017 by Paul Shepard
New TVS Diode Arrays of 28nm and Smaller Protect Chipsets from ESD Damage

New TVS Diode Arrays of 28nm and Smaller Protect Chipsets from ESD Damage

Littelfuse, Inc. introduced a series of 0.9pF ±30kV Discrete Unidirectional TVS Diode Arrays designed with low capacitance rail-to-rail diodes and…


new products Sep 20, 2017 by Littelfuse
GaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter

GaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter


News Sep 19, 2017 by Paul Shepard
250V Ultra-Junction X3-Class Power MOSFETs

250V Ultra-Junction X3-Class Power MOSFETs

IXYS announced a power semiconductor product line: 250V Ultra-Junction X3-Class HiPerFET™ Power MOSFETs


new products Sep 19, 2017 by IXYS
Interview Targeting all Power Applications from PCs to Industrial Equipment

Interview Targeting all Power Applications from PCs to Industrial Equipment

Rohm was founded in 1958 and renamed in Rohm Semiconductor in 2009. How would you describe the company's status in the electronics industry…


Isolated DC-DCs Optimized for Fast-Switching GaN Drivers

Isolated DC-DCs Optimized for Fast-Switching GaN Drivers