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Gate Driver Applications For Infineon’s CoolSiC™ MOSFET

Gate Driver Applications For Infineon’s CoolSiC™ MOSFET

This article discusses the advantages of SiC T-MOSFET compared to the conventional IGBT in terms of power savings and heatsink size reduction.


Dr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research

Dr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research


News Sep 27, 2017 by Paul Shepard
Sixth-Generation 650V SiC Schottky Diodes have Faster Switching

Sixth-Generation 650V SiC Schottky Diodes have Faster Switching

Mitsubishi Develops SiC Power Device with Record Power Efficiency

Mitsubishi Develops SiC Power Device with Record Power Efficiency


News Sep 21, 2017 by Paul Shepard
GaN FETs enable Reimagining Servos through Redesigned Power Electronics

GaN FETs enable Reimagining Servos through Redesigned Power Electronics


News Sep 20, 2017 by Paul Shepard
New TVS Diode Arrays of 28nm and Smaller Protect Chipsets from ESD Damage

New TVS Diode Arrays of 28nm and Smaller Protect Chipsets from ESD Damage

Littelfuse, Inc. introduced a series of 0.9pF ±30kV Discrete Unidirectional TVS Diode Arrays designed with low capacitance rail-to-rail diodes and…


new products Sep 20, 2017 by Littelfuse
GaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter

GaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter


News Sep 19, 2017 by Paul Shepard
250V Ultra-Junction X3-Class Power MOSFETs

250V Ultra-Junction X3-Class Power MOSFETs

IXYS announced a power semiconductor product line: 250V Ultra-Junction X3-Class HiPerFET™ Power MOSFETs


new products Sep 19, 2017 by IXYS
Interview Targeting all Power Applications from PCs to Industrial Equipment

Interview Targeting all Power Applications from PCs to Industrial Equipment

Rohm was founded in 1958 and renamed in Rohm Semiconductor in 2009. How would you describe the company's status in the electronics industry…


Isolated DC-DCs Optimized for Fast-Switching GaN Drivers

Isolated DC-DCs Optimized for Fast-Switching GaN Drivers

Ascatron enters SiC Power Device Market with Diodes up to 10kV

Ascatron enters SiC Power Device Market with Diodes up to 10kV


News Sep 18, 2017 by Paul Shepard
Advantages of Pre-Applied Thermal Interface Material for Power Modules

Advantages of Pre-Applied Thermal Interface Material for Power Modules

This article highlights Vincotech Thermal Interface Material (TIM) family that has a influence on the heat transfer from the power module to the…


SiC Devices Poised and Ready for Harsh Environment Applications

SiC Devices Poised and Ready for Harsh Environment Applications

This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2 Wolfspeed power module.


SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers

SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers


News Sep 14, 2017 by Paul Shepard
New Process for Making SiC Power Devices Opens Market to More Competition

New Process for Making SiC Power Devices Opens Market to More Competition


News Sep 14, 2017 by Paul Shepard
Choosing Among Ceramic Substrates for Power Circuits

Choosing Among Ceramic Substrates for Power Circuits

Designing modern power circuits starts with a choice of circuit material. This choice is critical for meeting performance goals. The material must…


1200V, 40A IGBT Optimized for High Switching Frequency Applications

1200V, 40A IGBT Optimized for High Switching Frequency Applications

Next-Generation GaN HEMTs Deliver Unmatched Efficiency

Next-Generation GaN HEMTs Deliver Unmatched Efficiency

Next Generation GaN HEMTs Deliver Unmatched Efficiency

Next Generation GaN HEMTs Deliver Unmatched Efficiency

Wolfspeed introduced a new series of 28V GaN HEMT RF power devices capable of higher frequency operation to 8GHz with increased efficiency and…


new products Sep 12, 2017 by Wolfspeed
New 1200V 40A H1 IGBT Optimized for High Switching Frequency Applications Announced

New 1200V 40A H1 IGBT Optimized for High Switching Frequency Applications Announced

Alpha and Omega Semiconductor Ltd. expands its recently launched fast turn-off switched 650V H-series IGBT family with a 1200V rating