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Kyma Demonstrates High Quality 200-mm GaN on QST® Templates

Kyma Demonstrates High Quality 200-mm GaN on QST® Templates


News Nov 07, 2017 by Paul Shepard
ON Semiconductor Reports Expanding Margins in Q3 2017

ON Semiconductor Reports Expanding Margins in Q3 2017


News Nov 06, 2017 by Paul Shepard
SiC Devices, Power in 3D Packaging, and More at IEDM 2017

SiC Devices, Power in 3D Packaging, and More at IEDM 2017


News Nov 01, 2017 by Paul Shepard
Advanced Si-IGBT Chip Design for Maximum Overall System Performance

Advanced Si-IGBT Chip Design for Maximum Overall System Performance

This article discusses the improvements brought by equipping sense emitter feature and on-chip temperature sensor to Si-IGBT modules.


Increasing Power in Small Smart-Home Hub

Increasing Power in Small Smart-Home Hub

This article reviews a typical approach for powering a smart hub and presents a new solution that delivers more efficient power and smaller space.


Switch 100kVA at 50kHz with SiC Power Evaluation Platform

Switch 100kVA at 50kHz with SiC Power Evaluation Platform


News Oct 23, 2017 by Paul Shepard
GaN Systems’ Eval Board Simplifies MegaHertz Power

GaN Systems’ Eval Board Simplifies MegaHertz Power


News Oct 20, 2017 by Paul Shepard
12V-to-Load DC-DC Dev Board Features 10MHz GaN Half-Bridge

12V-to-Load DC-DC Dev Board Features 10MHz GaN Half-Bridge


News Oct 20, 2017 by Paul Shepard
Cree aiming to Double SiC Capacity at Wolfspeed

Cree aiming to Double SiC Capacity at Wolfspeed


News Oct 19, 2017 by Paul Shepard
Navitas Announces High-Volume Capacity for GaN ICs

Navitas Announces High-Volume Capacity for GaN ICs


News Oct 18, 2017 by Paul Shepard
Second-Generation 650V SiC Schottky Barrier Diodes in DPAK

Second-Generation 650V SiC Schottky Barrier Diodes in DPAK

GaN FET Driver Brings Fastest Switching Speeds to Class-D Audio

GaN FET Driver Brings Fastest Switching Speeds to Class-D Audio

New P-Channel MOSFET  for USB PD Load Switch

New P-Channel MOSFET for USB PD Load Switch

Alpha and Omega Semiconductor introduces AONR21357, the initial product in this P-Channel family.


1200V Hyperfast Diodes and Their Applications

1200V Hyperfast Diodes and Their Applications

This article introduces the applications of 1200V Hyperfast diodes and discusses hard switching, soft switching and power losses in diode behavior.


EPC Names MIGVAN to Represent it’s GaN FETs and ICs in Isreal

EPC Names MIGVAN to Represent it’s GaN FETs and ICs in Isreal


News Oct 13, 2017 by Paul Shepard
Sumitomo Electric Launches 99% Defect Free SiC Epitaxial Wafers

Sumitomo Electric Launches 99% Defect Free SiC Epitaxial Wafers


News Oct 12, 2017 by Paul Shepard
P-Channel MOSFET for USB PD Load Switch

P-Channel MOSFET for USB PD Load Switch

GaN-on-Si RF Systems Technology and Power Devices Advance

GaN-on-Si RF Systems Technology and Power Devices Advance


News Oct 10, 2017 by Paul Shepard
Danfoss Preparing for Production of SiC Power Modules in NY

Danfoss Preparing for Production of SiC Power Modules in NY


News Oct 09, 2017 by Paul Shepard
WIN Enhances 0.25µm Gallium Nitride Power Process

WIN Enhances 0.25µm Gallium Nitride Power Process


News Oct 09, 2017 by Paul Shepard