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1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

new products Jan 16, 2018 by Paul Shepard
Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Littelfuse, Inc. introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family

new products Jan 16, 2018 by Littelfuse
3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.

Technical Articles Jan 13, 2018 by Nils Soltau
GaN enables Ultra Wide-Band Linearized Doherty Amplifier

GaN enables Ultra Wide-Band Linearized Doherty Amplifier

new products Jan 11, 2018 by Paul Shepard
Next Generation Silicon Carbide Power Device with 3DSiC Technology

Next Generation Silicon Carbide Power Device with 3DSiC Technology

Ascatron provides next generation Silicon Carbide (SiC) power semiconductors using its proprietary 3DSiC® technology with a quality and…

new products Jan 11, 2018 by Ascatron
Dynex Launches High-Voltage Semiconductor Foundry Business

Dynex Launches High-Voltage Semiconductor Foundry Business

News Jan 10, 2018 by Paul Shepard
NPC Modules with Latest IGBT Chip Tech for up to 120kVA

NPC Modules with Latest IGBT Chip Tech for up to 120kVA

new products Jan 10, 2018 by Paul Shepard
High-Voltage Multi-Channel Solenoid and Unipolar Motor Driver IC

High-Voltage Multi-Channel Solenoid and Unipolar Motor Driver IC

Toshiba Electronics Europe (TEE) announced the launch of a multi-channel solenoid and unipolar motor driver IC (TB67S111PG) that delivers…

new products Jan 10, 2018 by Toshiba Europe
Substrate with Integrated ESD Protection

Substrate with Integrated ESD Protection

This article highlights the features of TDK's CeraPad specifically on its integral ESD protection and its superiority to conventional LEDs.

Technical Articles Jan 10, 2018 by Dieter Vogel
GaN Enables 1600W Titanium Power Supply for Gamers

GaN Enables 1600W Titanium Power Supply for Gamers

News Jan 09, 2018 by Paul Shepard
GaN-Enabled Large-Area Wireless Power and High-Resolution LiDAR

GaN-Enabled Large-Area Wireless Power and High-Resolution LiDAR

News Jan 07, 2018 by Paul Shepard
Buck-Converter with Record Step-Down Ratio

Buck-Converter with Record Step-Down Ratio

This article highlights the ROHM Semiconductor's BD9V100MUF-C, a DC/DC converter that has both high conversion ratio and high switching…

new products Jan 05, 2018 by ROHM
Suntech Achieves Volume Production of Black Silicon Solar Cells

Suntech Achieves Volume Production of Black Silicon Solar Cells

News Jan 04, 2018 by Paul Shepard
Three-Phase MOSFET Driver IC with On-Board Regulator

Three-Phase MOSFET Driver IC with On-Board Regulator

new products Jan 01, 2018 by Paul Shepard
Half-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices

Half-Bridge Reference Design for Evaluating Si, SiC and GaN Power Devices

new products Dec 22, 2017 by Paul Shepard
40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

40V GaN Power Transistor is 8X Smaller than Equivalently-Rated MOSFETS

new products Dec 19, 2017 by Paul Shepard
Silicon-Carbide Enables UPS to Achieve Highest Energy Star Listing

Silicon-Carbide Enables UPS to Achieve Highest Energy Star Listing

News Dec 12, 2017 by Paul Shepard
Delta Joins BMW i Ventures as Strategic Investor in GaN Systems

Delta Joins BMW i Ventures as Strategic Investor in GaN Systems

News Dec 11, 2017 by Paul Shepard
Silicon Labs to Pay $282 Million to Acquire Sigma Designs

Silicon Labs to Pay $282 Million to Acquire Sigma Designs

News Dec 09, 2017 by Paul Shepard
Diamond and SiC Bonded at Room Temp. Enabling Radar Performance Boost

Diamond and SiC Bonded at Room Temp. Enabling Radar Performance Boost

News Dec 08, 2017 by Paul Shepard