EEPower

Latest Semiconductors Articles

Categories

AEC-Q101 Qualified Dual MOSFET for Relay Drivers

AEC-Q101 Qualified Dual MOSFET for Relay Drivers

GaN Enables Compact 1kW Isolated Bidirectional DC-DCs

GaN Enables Compact 1kW Isolated Bidirectional DC-DCs

Porous SiC for Advanced Sensors and Supercapacitors

Porous SiC for Advanced Sensors and Supercapacitors


News Jan 23, 2018 by Paul Shepard
SDK to Re-expand Capacity for High-Grade SiC Epitaxial Wafers

SDK to Re-expand Capacity for High-Grade SiC Epitaxial Wafers


News Jan 23, 2018 by Paul Shepard
High Power Electronics Cleaning Requirements for Improved Efficiency and Reliability

High Power Electronics Cleaning Requirements for Improved Efficiency and Reliability

This article highlights the importance and benefits of cleaning power modules before bonding to ensure long-term reliability.


High Power Density High Performance X-Series 4500V IGBT Power Modules

High Power Density High Performance X-Series 4500V IGBT Power Modules

This article discusses the improvements, important parameters and application of the high-performance X-Series 4500V IGBT Power Modules.


Ultra-Low Power Consumption Voltage Detection IC with MOSFET

Ultra-Low Power Consumption Voltage Detection IC with MOSFET

IGBT Modules Sectioned NonDestructively

IGBT Modules Sectioned NonDestructively

Non-destructive sectioning of solid samples is performed by acoustic micro imaging tools, which are sometimes still referred to by their old name…


Peregrine Semiconductor Is Now pSemi

Peregrine Semiconductor Is Now pSemi


News Jan 17, 2018 by Paul Shepard
1700 V LoPak1 IGBT Power Module by Holistic Design Approach

1700 V LoPak1 IGBT Power Module by Holistic Design Approach

This article presents the LoPak1 module created through a holistic design approach and elaborated on the significant improvements of the module.


1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

1200V SiC Schottky Diodes Rated for 8A, 15A and 20A

Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Expanded SiC Schottky Diode Line Reduces Switching Losses Increases Efficiency and Robustness

Littelfuse, Inc. introduced four new series of 1200V silicon carbide (SiC) Schottky Diodes from its GEN2 product family


new products Jan 16, 2018 by Littelfuse
3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

3.3 kV Full SiC MOSFETs – Towards High-Performance Traction Inverters

This article highlights the benefits of using the new Full SiC MOSFETS in traction applications and flexible converter designs.


GaN enables Ultra Wide-Band Linearized Doherty Amplifier

GaN enables Ultra Wide-Band Linearized Doherty Amplifier

Next Generation Silicon Carbide Power Device with 3DSiC Technology

Next Generation Silicon Carbide Power Device with 3DSiC Technology

Ascatron provides next generation Silicon Carbide (SiC) power semiconductors using its proprietary 3DSiC® technology with a quality and…


new products Jan 11, 2018 by Ascatron
Dynex Launches High-Voltage Semiconductor Foundry Business

Dynex Launches High-Voltage Semiconductor Foundry Business


News Jan 10, 2018 by Paul Shepard
NPC Modules with Latest IGBT Chip Tech for up to 120kVA

NPC Modules with Latest IGBT Chip Tech for up to 120kVA

High-Voltage Multi-Channel Solenoid and Unipolar Motor Driver IC

High-Voltage Multi-Channel Solenoid and Unipolar Motor Driver IC

Toshiba Electronics Europe (TEE) announced the launch of a multi-channel solenoid and unipolar motor driver IC (TB67S111PG) that delivers…


Substrate with Integrated ESD Protection

Substrate with Integrated ESD Protection

This article highlights the features of TDK's CeraPad specifically on its integral ESD protection and its superiority to conventional LEDs.


GaN Enables 1600W Titanium Power Supply for Gamers

GaN Enables 1600W Titanium Power Supply for Gamers


News Jan 09, 2018 by Paul Shepard