The new components are said to be the first that are both sulfur-resistant and AEC-Q100 compliant
The new components are said to be the first that are both sulfur-resistant and AEC-Q100 compliant
This article highlights Flex BMR685’s power-handling capabilities make it well-suited to these high-power RF Power…
This article highlights Flex BMR685’s power-handling capabilities make it well-suited to these high-power RF Power Amplifier applications, for…
Scientists from the Nagoya Institute of Technology (NITech) have conducted innovative research about the role of…
Scientists from the Nagoya Institute of Technology (NITech) have conducted innovative research about the role of impurities in Gallium Nitride…
This article highlights Diodes Incorporated expansion of its family of voltage-level shifters, with the release of…
This article highlights Diodes Incorporated expansion of its family of voltage-level shifters, with the release of the PI4ULS3V304AQ.
This article highlights esmo group full-service systems integrator that provides innovative and advanced engineering services.
This article highlights esmo group full-service systems integrator that provides innovative and advanced engineering services.
The monolithic level-shift drivers include integrated bootstrap diodes to save space and reduce overall BOM.
The monolithic level-shift drivers include integrated bootstrap diodes to save space and reduce overall BOM.
The 10 amp EP7010 can regulate through a 0 to 10 amp load step in less than 500 ns with under a 15 mv voltage droop
The 10 amp EP7010 can regulate through a 0 to 10 amp load step in less than 500 ns with under a 15 mv voltage droop
The new family of devices eliminate most power losses in AC/DC power supplies and makes titanium level efficiencies possible
The new family of devices eliminate most power losses in AC/DC power supplies and makes titanium level efficiencies possible
The new driver delivers gate-driving voltages of up to 26 volts and operates from a high-voltage rail up to 1200V
The new driver delivers gate-driving voltages of up to 26 volts and operates from a high-voltage rail up to 1200V
This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet…
This article highlights publicly-funded project MessLeha addresses this issue by defining a machine-readable data sheet to support the setup of…
This linear regulator also ensures robust circuit protection, such as overcurrent protection, thermal shutdown and the…
This linear regulator also ensures robust circuit protection, such as overcurrent protection, thermal shutdown and the power good signal, which…
This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and…
This article highlights EPC introduction of a laser driver that integrates a 40 V, 10 A FET with a gate driver and low-voltage differential…
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
The new AEC-Q101 qualified device sports a typical RDS(ON) of 33mΩ and a 15 volt recommended gate driving voltage
This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.
This article highlights MinDCet GaN power stages that requires implementing an optimized gate-driver for GaN transistors.
Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.
Model PAC18R series features a shaft sealing for an enhanced ingress protection level and a precise rotational feel.
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and…
This article highlights STMicroelectronics STGAP2SiCS is optimized for safe control of silicon carbide (SiC) MOSFETs and operates from a…
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
The new design is for a highly efficient, 65 watt active clamp flyback charger targeted at USB-C power delivery (PD) applications
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um…
This article highlights Tower Semiconductor state-of-the-art galvanic capacitor technology integrated with its 0.18um power management and mixed…
The new devices save power and are tough enough to thrive even in challenging physical environments.
The new devices save power and are tough enough to thrive even in challenging physical environments.
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
The four new devices feature RDS(ON)s as low as 12mΩ, the best on the market for D2PAK7L and TO247 packaged devices.
Facebook
Google
GitHub
Linkedin