Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.” While silicon carbide devices
Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.” While silicon carbide devices
This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace…
This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace silicon in power devices.
Navitas Semiconductor announced the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™…
Navitas Semiconductor announced the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ monolithically-integrated 650V…
This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET…
This article highlights the advantages of GaN E-HMET from GaN Systems over the conventional silicon-based IGBT and MOSFET inverter solutions.
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