CoorsTek will unveil its enhanced Gallium Nitride on Silicon (GaN-on-Si) epiwafers at next week's International Symposium on Power Semiconductor Devices and ICs (ISPSD) in Prague, Czech Republic. For the first time at this event, CoorsTek will display the integrated capabilities of CoorsTek and Covalent Materials (formerly Toshiba Ceramics, now CoorsTek KK) including: GaN-on-Si Epiwafers for power devices and integrated circuits (ICs), Aluminum nitride (AlN) substrates for hybrid circuits, and Engineered ceramic components for semiconductor processing equipment made from PureSiC® CVD Silicon Carbide, PlasmaPure™ High-Purity Alumina, and other technical ceramics.
“The latest CoorsTek gallium nitride-on-silicon technology helps customers achieve higher device manufacturing yields and breakdown voltages based on lower defect densities and leakage current,†explains Jun Komiyama, PhD, R&D Manager at CoorsTek. “The shift from 150 mm to 200 mm diameter GaN-on-Si process is also improving the economics for power electronics in electric and hybrid automobiles, solar photovoltaic inverters, RF and microwave power, and more.â€
Last week, CoorsTek announced its acquisition of the Philips ceramic operation in Uden, Netherlands ─ extending its footprint to a dozen European manufacturing locations in the Czech Republic, England, Finland, Germany, Italy, Netherlands, Norway, Scotland, and Sweden.
