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International Electron Devices  MeetingI – EDM 2015

International Electron Devices MeetingI – EDM 2015

The IEEE’s premier forum for the discussion of advances in micro/nano electronics featured a special focus on advanced wide bandgap materials for…


tech insights Feb 01, 2016 by Gary Dolny
The Influence of IGBT5 and .XT Technology on the System Power Density illustrated through a Hardware Demonstrator

The Influence of IGBT5 and .XT Technology on the System Power Density illustrated through a Hardware Demonstrator

This article discusses the advantages brought about by IGBT5 and .XT Technology in increasing the power density and lifetime of power modules.


100-V High-Side FET Driver for High-Power Li-ion Packs

100-V High-Side FET Driver for High-Power Li-ion Packs

Silicon ‘Sawdust’ in a Graphene Cage Boosts Battery Performance

Silicon ‘Sawdust’ in a Graphene Cage Boosts Battery Performance


News Jan 28, 2016 by Jeff Shepard
GaN enables 50A / 1MHz 12V-to-1V POL

GaN enables 50A / 1MHz 12V-to-1V POL

Flexible One-Chip ARM Cortex-M0 Solution

Flexible One-Chip ARM Cortex-M0 Solution

GaN RF Power Amplifier with Highest Output Performance

GaN RF Power Amplifier with Highest Output Performance


News Jan 26, 2016 by Jeff Shepard
Microwave Heating System with GaN-Amplifier-Modules

Microwave Heating System with GaN-Amplifier-Modules


News Jan 25, 2016 by Jeff Shepard
Torex Semiconductor to Open Kansai Technology Center

Torex Semiconductor to Open Kansai Technology Center


News Jan 24, 2016 by Jeff Shepard
Educational Videos on GaN Devices for Power Conversion

Educational Videos on GaN Devices for Power Conversion


News Jan 24, 2016 by Jeff Shepard
Programmable Six-Channel Low-Side MOSFET Pre-Driver

Programmable Six-Channel Low-Side MOSFET Pre-Driver

BTRAN  BiDirectional BiPolar Junction Transistor

BTRAN BiDirectional BiPolar Junction Transistor

This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new topology for power semiconductors.


100V MOSFET H-bridge in 5mm x 4.5mm Package

100V MOSFET H-bridge in 5mm x 4.5mm Package

IGBT Modules Increase Efficiency in TIG Welding Machines

IGBT Modules Increase Efficiency in TIG Welding Machines

Development Boards with 200V eGaN FETs Operate to 30 MHz

Development Boards with 200V eGaN FETs Operate to 30 MHz

PMICs Optimized for Intel’s Skylake Core Processor Architecture

PMICs Optimized for Intel’s Skylake Core Processor Architecture

GaN gets EPC CEO Alex Lidow 2015 SEMI Award

GaN gets EPC CEO Alex Lidow 2015 SEMI Award


News Jan 13, 2016 by Jeff Shepard
SunEdison to distribute EpiGaN’s GaN-on-Si epi wafers

SunEdison to distribute EpiGaN’s GaN-on-Si epi wafers


News Jan 12, 2016 by Jeff Shepard
Darnell Defines the Next Decade – Devices, 3D Printing and Connectivity

Darnell Defines the Next Decade – Devices, 3D Printing and Connectivity

£50m for UK Compound Semiconductor Catapult

£50m for UK Compound Semiconductor Catapult


News Jan 10, 2016 by Jeff Shepard