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Gallium Nitride to Supplant Silicon in Integrated Circuits

Gallium Nitride to Supplant Silicon in Integrated Circuits

News Apr 07, 2016 by Jeff Shepard
Dual HV IGBT Modules for Traction and Heavy Industry

Dual HV IGBT Modules for Traction and Heavy Industry

new products Apr 07, 2016 by Power Pulse1595211359
Power Modules for Combining Innovation, Flexibility and Power Capability in the Various 3-Level Topologies

Power Modules for Combining Innovation, Flexibility and Power Capability in the Various 3-Level Topologies

This article introduces Mitsubishi Electric Corporation's new three-level topology power modules with optimized packaging for 3-level inverter…

Technical Articles Apr 07, 2016 by Narender Lakshmanan
Gallium-Oxide may be a New Frontier for Power Semis

Gallium-Oxide may be a New Frontier for Power Semis

News Apr 06, 2016 by Jeff Shepard
SiC-based Analog Op Amp with Temperature Gain of 200 at 400 C

SiC-based Analog Op Amp with Temperature Gain of 200 at 400 C

News Apr 05, 2016 by Power Pulse1595211359
$13.5M for Large-Diameter SiC Substrates for SiC and GaN Devices

$13.5M for Large-Diameter SiC Substrates for SiC and GaN Devices

News Apr 05, 2016 by Jeff Shepard
A Commercial High Temperature Capacitor Dielectric for Power Applications

A Commercial High Temperature Capacitor Dielectric for Power Applications

This article introduces DuPont Teijin Films' Teonex, a new dielectric for DC-Link and snubber power capacitors and discusses its features and…

Technical Articles Apr 05, 2016 by Lucien Schosseler
GaAs Power Conversion coming from ams and Sarda

GaAs Power Conversion coming from ams and Sarda

News Apr 04, 2016 by Jeff Shepard
Programmable Mixed-signal IC adds Asynchronous State Machine

Programmable Mixed-signal IC adds Asynchronous State Machine

new products Apr 04, 2016 by Jeff Shepard
Multi-Phase 55V Synchronous Boost Controllers Simplify Automotive Power System Design

Multi-Phase 55V Synchronous Boost Controllers Simplify Automotive Power System Design

This article introduces Intersil Corporation's ISL78227 and ISL78229, two 55V two-phase synchronous boost controllers with integrated MOSFET…

new products Apr 01, 2016 by Intersil
Is Only Full SiC the “Real“ SiC?

Is Only Full SiC the “Real“ SiC?

Whenever we talk about Silicon Carbide and its applications, our thoughts jump to Silicon Carbide MOSFET power modules, the so called “Full…

tech insights Apr 01, 2016 by Stefan Hauser
The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…

Technical Articles Apr 01, 2016 by Peter Friedrichs
15MHz GaN Half-Bridge Development Boards

15MHz GaN Half-Bridge Development Boards

News Mar 30, 2016 by Jeff Shepard
Precision Enhancement Mode MOSFET Arrays

Precision Enhancement Mode MOSFET Arrays

new products Mar 30, 2016 by Jeff Shepard
Test System for the Power Semiconductor Industry

Test System for the Power Semiconductor Industry

new products Mar 29, 2016 by Jeff Shepard
System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.

Technical Articles Mar 28, 2016 by Aly Mashaly
LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

This article introduces ABB Semiconductor's LinPak, a new IGBT module generation that is the enabler for lowest overall stray inductance.

Technical Articles Mar 25, 2016 by Raffael Schnell
Thermal FOM for Chip-Scale Packaged GaN Transistors

Thermal FOM for Chip-Scale Packaged GaN Transistors

News Mar 24, 2016 by Power Pulse1595211359
Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…

Technical Articles Mar 23, 2016 by AV Stavtsev
650V GaN FET with 41mOhms On-Resistance in a TO-247

650V GaN FET with 41mOhms On-Resistance in a TO-247

new products Mar 23, 2016 by Power Pulse1595211359