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Two New Drivers for Automotive Brushless DC Motors

Two New Drivers for Automotive Brushless DC Motors

Texas Instruments introduces two new automotive motor drivers that support high-performance powertrain applications.


Enhanced IGBT Module Power Density Utilizing the Improved Thermal Conductivity of SLC-Technology

Enhanced IGBT Module Power Density Utilizing the Improved Thermal Conductivity of SLC-Technology

This article introduces the new IGBT module generation of Mitsubishi Electric with improved Insulated Metal Baseplate as a key element of the…


WPG Americas pens Distribution Agreement with Seoul Semiconductor

WPG Americas pens Distribution Agreement with Seoul Semiconductor


News Jun 14, 2016 by Jeff Shepard
Brushless DC Motor Drivers for Automotive Powertrains

Brushless DC Motor Drivers for Automotive Powertrains

GaAs Voltage Regulators to be Packaged in 3D SIPs

GaAs Voltage Regulators to be Packaged in 3D SIPs


News Jun 13, 2016 by Jeff Shepard
Keeping Cool with a Black Semiconductor

Keeping Cool with a Black Semiconductor


News Jun 13, 2016 by Jeff Shepard
Laminated Busbar Enabling High Frequency High Voltage and High Temperature Electronics

Laminated Busbar Enabling High Frequency High Voltage and High Temperature Electronics

Mersen presented its unique solution to get the best of the 2 worlds: high T° (up to 200°C) and low inductance laminated busbar for power module…


new products Jun 13, 2016 by Mersen
Ultra-Low Power Technologies for the IoT

Ultra-Low Power Technologies for the IoT


News Jun 09, 2016 by Jeff Shepard
SDK Expands High-Grade SiC Epitaxial Wafer Capacity

SDK Expands High-Grade SiC Epitaxial Wafer Capacity


News Jun 08, 2016 by Jeff Shepard
Enhanced GaN-on-Silicon Epiwafers at be Unveiled

Enhanced GaN-on-Silicon Epiwafers at be Unveiled


News Jun 08, 2016 by Jeff Shepard
Improving Thermal Performance with Chip-Scale Packaged Gallium Nitride Transistors

Improving Thermal Performance with Chip-Scale Packaged Gallium Nitride Transistors

This article discusses the advantages of chip-scale packaging of GaN transistors by evaluating its thermal performance and efficiency.


Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Podium Session at PCIM Europe Marks New Chapter in GaN Power Device Adoption

Over the years, GaN power has been sarcastically described as “the technology of the future…and always will be.”  While silicon carbide devices


tech insights Jun 06, 2016 by Greg Evans
GaN Device claims Highest Efficiency at Highest Frequency

GaN Device claims Highest Efficiency at Highest Frequency

Metal Composite High-Current Chip Inductors

Metal Composite High-Current Chip Inductors

Design Methodology for First Pass Success: A rationale for hardware simulation

Design Methodology for First Pass Success: A rationale for hardware simulation

This article highlights the importance of modelling and simulation task in design methodology to reduce the number of design iterations and acquire…


Industry’s Highest Current 40A 16-VIN Converter Released

Industry’s Highest Current 40A 16-VIN Converter Released

Texas Instruments introduced the industry’s first 40-A, 16-VIN synchronous step-down DC/DC converter with true differential remote-voltage sensing


150mA Linear LED Driver with Push-Button Input

150mA Linear LED Driver with Push-Button Input

High Current Power MOSFET with Current Mirror and Temperature Sense Diodes

High Current Power MOSFET with Current Mirror and Temperature Sense Diodes

This article discusses the advantages of IXYS' MMIXT132N50P3 with current mirror to monitor the drain current and its various applications.


Recent Advancements in IGCT Technologies for High-Power Electronics Applications

Recent Advancements in IGCT Technologies for High-Power Electronics Applications

This article discusses the main features which make the IGCT an attractive option for high power applications with respect to the technology…


Simplify Power Electronics Design with GaN Power ICs

Simplify Power Electronics Design with GaN Power ICs

This article highlights Gallium Nitride's (GAN) advantages over silicon in terms of performance to finally displace silicon in power devices.