ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017…
ROHM Semiconductor presented its cutting-edge silicon carbide (SiC) technology at the first race of the new 2016/2017 Formula E season in Hong Kong.
This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max…
This article features the ABB's third generation of 1700V SPT++ IGBTs which is capable of operating up to a max temperature of 175˚C.
STMicroelectronics has introduced the industry’s first 800V surface-mount Silicon Controlled Rectifiers (SCR, or…
STMicroelectronics has introduced the industry’s first 800V surface-mount Silicon Controlled Rectifiers (SCR, or thyristor) specified for…
Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET…
Toshiba Electronics Europe has announced a series of next-generation output transistor arrays that feature a DMOS FET type sink output.
This article discusses the advances in superjunction MOSFETs and SiC Rectifiers and how they can improve on-resistance…
This article discusses the advances in superjunction MOSFETs and SiC Rectifiers and how they can improve on-resistance and noise of power supply…
This article discusses the technical aspects of ABB's newly developed Reverse Conducting Integrated Gate Commutated…
This article discusses the technical aspects of ABB's newly developed Reverse Conducting Integrated Gate Commutated Thyristor (RC-IGCT) platform.
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