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SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers

SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers


News Sep 14, 2017 by Paul Shepard
5V 65nm CMOS Process with Enhanced Rds(on) and Digital Density

5V 65nm CMOS Process with Enhanced Rds(on) and Digital Density


News Sep 14, 2017 by Paul Shepard
New Process for Making SiC Power Devices Opens Market to More Competition

New Process for Making SiC Power Devices Opens Market to More Competition


News Sep 14, 2017 by Paul Shepard
Choosing Among Ceramic Substrates for Power Circuits

Choosing Among Ceramic Substrates for Power Circuits

Designing modern power circuits starts with a choice of circuit material. This choice is critical for meeting performance goals. The material must…


Stepping Motor Driver IC has an Anti-Stall Feedback Architecture

Stepping Motor Driver IC has an Anti-Stall Feedback Architecture

1200V, 40A IGBT Optimized for High Switching Frequency Applications

1200V, 40A IGBT Optimized for High Switching Frequency Applications

Next-Generation GaN HEMTs Deliver Unmatched Efficiency

Next-Generation GaN HEMTs Deliver Unmatched Efficiency

Three-Axis Linear Hall-Effect Sensor IC Alternative to Potentiometers

Three-Axis Linear Hall-Effect Sensor IC Alternative to Potentiometers

EconoPIM 3 with Increased Current Rating of 150 A

EconoPIM 3 with Increased Current Rating of 150 A

Infineon Technologies AG is expanding the product portfolio of the IGBT modules with the EconoPIM™ 3 package increasing the current rating from…


Next Generation GaN HEMTs Deliver Unmatched Efficiency

Next Generation GaN HEMTs Deliver Unmatched Efficiency

Wolfspeed introduced a new series of 28V GaN HEMT RF power devices capable of higher frequency operation to 8GHz with increased efficiency and…


new products Sep 12, 2017 by Wolfspeed
New 1200V 40A H1 IGBT Optimized for High Switching Frequency Applications Announced

New 1200V 40A H1 IGBT Optimized for High Switching Frequency Applications Announced

Alpha and Omega Semiconductor Ltd. expands its recently launched fast turn-off switched 650V H-series IGBT family with a 1200V rating


JEDEC Committee to set Standards for WBG Power Semiconductors

JEDEC Committee to set Standards for WBG Power Semiconductors


News Sep 11, 2017 by Paul Shepard
Newly-Discovered Semiconductor Dynamics May Help Improve Energy Efficiency

Newly-Discovered Semiconductor Dynamics May Help Improve Energy Efficiency


News Sep 11, 2017 by Paul Shepard
Signing Seals Compound Semiconductor Cluster in South-East Wales

Signing Seals Compound Semiconductor Cluster in South-East Wales


News Sep 11, 2017 by Paul Shepard
Thyristors for Current Impulses Commutation in Amplitude Range of Hundreds kA and Duration Range of Hundreds µs

Thyristors for Current Impulses Commutation in Amplitude Range of Hundreds kA and Duration Range of Hundreds µs

This article discusses the variety of improvements of the new generation of silicon pulse thyristors for commutation of current impulses.


1200-Volt SiC Schottkys for High-Temperature Designs

1200-Volt SiC Schottkys for High-Temperature Designs

60V High-Side N-Channel MOSFET Driver Supports 100% Duty Cycles

60V High-Side N-Channel MOSFET Driver Supports 100% Duty Cycles

Off-Line Controllers with Integrated FET Deliver up to 48W

Off-Line Controllers with Integrated FET Deliver up to 48W

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.


IEEE Rates Peregrine Semiconductor as a Leader in “Patent Power”

IEEE Rates Peregrine Semiconductor as a Leader in “Patent Power”


News Sep 07, 2017 by Paul Shepard