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Next-Generation GaN HEMTs Deliver Unmatched Efficiency

Next-Generation GaN HEMTs Deliver Unmatched Efficiency

Three-Axis Linear Hall-Effect Sensor IC Alternative to Potentiometers

Three-Axis Linear Hall-Effect Sensor IC Alternative to Potentiometers

EconoPIM 3 with Increased Current Rating of 150 A

EconoPIM 3 with Increased Current Rating of 150 A

Infineon Technologies AG is expanding the product portfolio of the IGBT modules with the EconoPIM™ 3 package increasing the current rating from…


Next Generation GaN HEMTs Deliver Unmatched Efficiency

Next Generation GaN HEMTs Deliver Unmatched Efficiency

Wolfspeed introduced a new series of 28V GaN HEMT RF power devices capable of higher frequency operation to 8GHz with increased efficiency and…


new products Sep 12, 2017 by Wolfspeed
New 1200V 40A H1 IGBT Optimized for High Switching Frequency Applications Announced

New 1200V 40A H1 IGBT Optimized for High Switching Frequency Applications Announced

Alpha and Omega Semiconductor Ltd. expands its recently launched fast turn-off switched 650V H-series IGBT family with a 1200V rating


JEDEC Committee to set Standards for WBG Power Semiconductors

JEDEC Committee to set Standards for WBG Power Semiconductors


News Sep 11, 2017 by Paul Shepard
Newly-Discovered Semiconductor Dynamics May Help Improve Energy Efficiency

Newly-Discovered Semiconductor Dynamics May Help Improve Energy Efficiency


News Sep 11, 2017 by Paul Shepard
Signing Seals Compound Semiconductor Cluster in South-East Wales

Signing Seals Compound Semiconductor Cluster in South-East Wales


News Sep 11, 2017 by Paul Shepard
Thyristors for Current Impulses Commutation in Amplitude Range of Hundreds kA and Duration Range of Hundreds µs

Thyristors for Current Impulses Commutation in Amplitude Range of Hundreds kA and Duration Range of Hundreds µs

This article discusses the variety of improvements of the new generation of silicon pulse thyristors for commutation of current impulses.


1200-Volt SiC Schottkys for High-Temperature Designs

1200-Volt SiC Schottkys for High-Temperature Designs

60V High-Side N-Channel MOSFET Driver Supports 100% Duty Cycles

60V High-Side N-Channel MOSFET Driver Supports 100% Duty Cycles

Off-Line Controllers with Integrated FET Deliver up to 48W

Off-Line Controllers with Integrated FET Deliver up to 48W

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.


IEEE Rates Peregrine Semiconductor as a Leader in “Patent Power”

IEEE Rates Peregrine Semiconductor as a Leader in “Patent Power”


News Sep 07, 2017 by Paul Shepard
High-Current 4-Channel H-bridge Motor Driver IC is 0.9mm High

High-Current 4-Channel H-bridge Motor Driver IC is 0.9mm High

GaN-based High-Power, Near Field WattUp Charging Solution

GaN-based High-Power, Near Field WattUp Charging Solution


News Sep 07, 2017 by Paul Shepard
Alpha and Omega Semi Licenses Digital Multiphase Controllers from STMicro

Alpha and Omega Semi Licenses Digital Multiphase Controllers from STMicro


News Sep 06, 2017 by Paul Shepard
COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.


Compound Semiconductor Applications Catapult appoints CEO

Compound Semiconductor Applications Catapult appoints CEO


News Sep 02, 2017 by Paul Shepard
Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis

Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis


News Sep 01, 2017 by Paul Shepard