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High-Purity Silicon Carbide Technology Platform for SiC Power Devices

High-Purity Silicon Carbide Technology Platform for SiC Power Devices

News Aug 16, 2017 by Paul Shepard
Ultrafast RF MOSFET Driver Supports 8ns Pulse Widths

Ultrafast RF MOSFET Driver Supports 8ns Pulse Widths

new products Aug 16, 2017 by Paul Shepard
Electric Power Research Institute Funds GRAPES SiC Project

Electric Power Research Institute Funds GRAPES SiC Project

News Aug 15, 2017 by Paul Shepard
Enhanced LTSpice Model Simplifies Designing with GaN

Enhanced LTSpice Model Simplifies Designing with GaN

News Aug 15, 2017 by Paul Shepard
Current Sensor IC with Dual User-Settable Over-Current Fault Outputs

Current Sensor IC with Dual User-Settable Over-Current Fault Outputs

new products Aug 14, 2017 by Paul Shepard
SunPower Unveils Silicon Valley Pilot Line for High-Efficiency Solar Panels

SunPower Unveils Silicon Valley Pilot Line for High-Efficiency Solar Panels

News Aug 14, 2017 by Paul Shepard
80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

Wolfspeed, A Cree Company announces that it has advanced the development of high efficiency data center power supplies through the implementation…

new products Aug 11, 2017 by Wolfspeed
Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

new products Aug 10, 2017 by Paul Shepard
8-Bit MCUs for IGBT Control

8-Bit MCUs for IGBT Control

new products Aug 10, 2017 by Paul Shepard
SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

News Aug 10, 2017 by Paul Shepard
GaN Gives Radar 360 Degree Threat Detection Ability

GaN Gives Radar 360 Degree Threat Detection Ability

News Aug 08, 2017 by Paul Shepard
II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

News Aug 07, 2017 by Paul Shepard
RF MLCCs Rated to +200 C Target SiC and GaN Designs

RF MLCCs Rated to +200 C Target SiC and GaN Designs

new products Aug 07, 2017 by Paul Shepard
GaN Power Amplifiers feature Low Noise High Gain

GaN Power Amplifiers feature Low Noise High Gain

new products Aug 07, 2017 by Paul Shepard
Cesium-Tin-Oxide Wires - A Semiconductor That Blocks Heat Transfer

Cesium-Tin-Oxide Wires - A Semiconductor That Blocks Heat Transfer

News Aug 07, 2017 by Paul Shepard
Current Progress at Si IGBTs in the Voltage Range up to 1200V

Current Progress at Si IGBTs in the Voltage Range up to 1200V

In recent years the basic features introduced at the turn of the millennium for IGBTs such as trench gate cell and field stop layers could be…

Technical Articles Aug 07, 2017 by Anton Mauder
Showa Denko Acquires Assets Related to SiC for Power Devices

Showa Denko Acquires Assets Related to SiC for Power Devices

News Aug 06, 2017 by Paul Shepard
Field Programmable Controller to Boost EV and HEV Performance

Field Programmable Controller to Boost EV and HEV Performance

new products Aug 03, 2017 by Paul Shepard
Power Transistor Modeler Reduces Time to Market

Power Transistor Modeler Reduces Time to Market

new products Aug 02, 2017 by Paul Shepard
PCIM Asia 2017 – Breaking New Ground

PCIM Asia 2017 – Breaking New Ground

This article discusses the PCIM Asia 2017 at Shanghai World Expo Exhibition and Convention Center last June 27 to 29, 2017.

new products Aug 02, 2017 by Bodos Power China