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Power Devices and MEMs Joint-Venture Announced in Shaoxing, China

Power Devices and MEMs Joint-Venture Announced in Shaoxing, China

News Mar 01, 2018 by Paul Shepard
650V SiC Schottkys Feature Superior Switching Performance and Higher Reliability

650V SiC Schottkys Feature Superior Switching Performance and Higher Reliability

new products Feb 28, 2018 by Paul Shepard
120A / 650V GaN Power Transistor Can Double Power Conversion Density

120A / 650V GaN Power Transistor Can Double Power Conversion Density

new products Feb 28, 2018 by Paul Shepard
1200V SiC MOSFETs and SiC SBDs for Industrial and Automotive Designs

1200V SiC MOSFETs and SiC SBDs for Industrial and Automotive Designs

new products Feb 27, 2018 by Paul Shepard
100V GaN Transistor in High-Performance Buck Converter Evaluation Board

100V GaN Transistor in High-Performance Buck Converter Evaluation Board

News Feb 27, 2018 by Paul Shepard
Integrated, High-Sensitivity, Current Sensor IC for <5A Applications

Integrated, High-Sensitivity, Current Sensor IC for <5A Applications

new products Feb 27, 2018 by Paul Shepard
“Twinning” Promises to Vastly Reduce Wafering Costs for SiC-Based Devices

“Twinning” Promises to Vastly Reduce Wafering Costs for SiC-Based Devices

News Feb 26, 2018 by Paul Shepard
Sonics and Inomize Partner on ISO26262 Automotive Chip Design

Sonics and Inomize Partner on ISO26262 Automotive Chip Design

News Feb 26, 2018 by Paul Shepard
Infineon and Cree agree on Long-Term SiC Wafer Supply

Infineon and Cree agree on Long-Term SiC Wafer Supply

News Feb 25, 2018 by Paul Shepard
Insulated-Gate GaN Power Transistor Capable of Continuous Stable Operation

Insulated-Gate GaN Power Transistor Capable of Continuous Stable Operation

News Feb 23, 2018 by Paul Shepard
Multiprotocol Bluetooth & 802.15.4 System-on-Chip for IoT Devices

Multiprotocol Bluetooth & 802.15.4 System-on-Chip for IoT Devices

new products Feb 23, 2018 by Paul Shepard
Mitsubishi Electric US to Exhibit at IEEE APEC for the First Time

Mitsubishi Electric US to Exhibit at IEEE APEC for the First Time

News Feb 23, 2018 by Paul Shepard
Selective-Area Doping to Produce Vertical GaN Power Switches

Selective-Area Doping to Produce Vertical GaN Power Switches

News Feb 22, 2018 by Paul Shepard
New Ferrite for High-Frequency GaN and SiC Power Converters

New Ferrite for High-Frequency GaN and SiC Power Converters

new products Feb 22, 2018 by Paul Shepard
1200V SiC Schottkys Designed to Endure High-Pollution Environments

1200V SiC Schottkys Designed to Endure High-Pollution Environments

new products Feb 21, 2018 by Paul Shepard
AEC-Q200 Medium-Voltage Thick-Film Chip Resistors

AEC-Q200 Medium-Voltage Thick-Film Chip Resistors

new products Feb 20, 2018 by Paul Shepard
Battery Protection IC with Integrated FET for 1-Cell Li-ion Systems

Battery Protection IC with Integrated FET for 1-Cell Li-ion Systems

new products Feb 18, 2018 by Paul Shepard
Navitas Showcases GaNFast™ Power ICs at APEC 2018

Navitas Showcases GaNFast™ Power ICs at APEC 2018

News Feb 17, 2018 by Paul Shepard
Infineon to Highlight GaN, SiC and Si Power Electronics Portfolio

Infineon to Highlight GaN, SiC and Si Power Electronics Portfolio

News Feb 16, 2018 by Paul Shepard
EPC to Showcase GaN FETs and ICs in End Products at APEC

EPC to Showcase GaN FETs and ICs in End Products at APEC

News Feb 16, 2018 by Paul Shepard