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1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

SiC Cascodes and Their Advantages in Power Electronic Applications

SiC Cascodes and Their Advantages in Power Electronic Applications

This article highlights United Silicon Carbide Inc. SiC Cascodes advantages for power electronics applications and comparison with other WBG devices.


Kyma Adds Substrates to its Gallium Oxide (β-Ga2O3) Product Line

Kyma Adds Substrates to its Gallium Oxide (β-Ga2O3) Product Line


News Mar 13, 2018 by Paul Shepard
Automotive Sinusoidal Sensorless BLDC Fan Driver IC

Automotive Sinusoidal Sensorless BLDC Fan Driver IC

GaN Power Portfolio Expanded with the Industrys Smallest and Fastest GaN Drivers

GaN Power Portfolio Expanded with the Industrys Smallest and Fastest GaN Drivers

Texas Instruments (TI) today announced two new high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing…


1kV SiC FETs Enable 6.6kW Bi-Directional On-Board Charger Design

1kV SiC FETs Enable 6.6kW Bi-Directional On-Board Charger Design


News Mar 12, 2018 by Paul Shepard
Highly-Integrated GaN BUCS for Next Gen Portable SATCOM Terminals

Highly-Integrated GaN BUCS for Next Gen Portable SATCOM Terminals


News Mar 12, 2018 by Paul Shepard
1200V SiC MOSFETs with Ultra-Low On-Resistances Introduced at APEC 2018

1200V SiC MOSFETs with Ultra-Low On-Resistances Introduced at APEC 2018

Littelfuse, Inc. and Monolith Semiconductor Inc. today added two 1200V silicon carbide (SiC) n‑channel, enhancement-mode MOSFETs.


new products Mar 12, 2018 by Littelfuse
SiC in Industrial Auxiliary Power Supplies

SiC in Industrial Auxiliary Power Supplies

This article highlights ROHM Semiconductor BD768xFJ control IC with the ROHM 1700V SiC MOSFET as part of principal circuit of the auxiliary power…


3.3-kW Bridgeless Totem-pole PFC GaN Reference Design

3.3-kW Bridgeless Totem-pole PFC GaN Reference Design


News Mar 10, 2018 by Paul Shepard
GaN Power Modules Deliver Over 1400 W/in3 for 48V to 12V PoLs

GaN Power Modules Deliver Over 1400 W/in3 for 48V to 12V PoLs

GaN Testing Success Beyond 10X of JEDEC Requirements

GaN Testing Success Beyond 10X of JEDEC Requirements


News Mar 09, 2018 by Paul Shepard
eGaN ICs Combining Gate Drivers with High Frequency GaN FETs

eGaN ICs Combining Gate Drivers with High Frequency GaN FETs

7th Generation 1700 V IGBT Modules: Loss Reduction and Excellent System Performance

7th Generation 1700 V IGBT Modules: Loss Reduction and Excellent System Performance

This article features Mitsubishi Electric Europe B.V. 7th Generation IGBT Modules with the analysis of IGBT chip and diode chip performances.


Capacitors for Fast-Switching Wide Bandgap Semiconductor Applications

Capacitors for Fast-Switching Wide Bandgap Semiconductor Applications

Nexperias Guangdong Expansion Increases Capacity to > 100 Billion Pieces/Year

Nexperias Guangdong Expansion Increases Capacity to > 100 Billion Pieces/Year


News Mar 08, 2018 by Paul Shepard
Semiconductor Solutions for Energy Storage Systems in Light Traction Vehicles

Semiconductor Solutions for Energy Storage Systems in Light Traction Vehicles

This article highlights semiconductor solutions using Infineon Technologies AG IGBT modules belonging to the PrimePACK™ family equipped with…


Record-Setting 100 V/120A GaN Power Transistor

Record-Setting 100 V/120A GaN Power Transistor

High-Power and High-Voltage Isolated SiC Power Module Gate Driver Board

High-Power and High-Voltage Isolated SiC Power Module Gate Driver Board


News Mar 07, 2018 by Paul Shepard
Dynamically-Configurable Off-Line Switcher IC Supports USB PD 3.0 + PPS

Dynamically-Configurable Off-Line Switcher IC Supports USB PD 3.0 + PPS