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NXP Triples Its 65V LDMOS Offering for RF Power

NXP Triples Its 65V LDMOS Offering for RF Power


News Sep 30, 2018 by Paul Shepard
IGBT Modules Advanced Acoustic Micro Imaging

IGBT Modules Advanced Acoustic Micro Imaging

This article examines the acoustic microimaging of a warped ceramic raft in an IGBT module via the integral acoustic imaging mode developed by…


STMicro and Leti Partner to Develop High-Power GaN-on-Si Devices

STMicro and Leti Partner to Develop High-Power GaN-on-Si Devices


News Sep 24, 2018 by Paul Shepard
Littelfuse Announces 1700V, 1-Ohm SiC MOSFET

Littelfuse Announces 1700V, 1-Ohm SiC MOSFET

STMicroelectronics and Leti Develop GaN-on-Silicon Technology for Power Conversion Applications

STMicroelectronics and Leti Develop GaN-on-Silicon Technology for Power Conversion Applications

STMicroelectronics and Leti today announced their cooperation to industrialize GaN (gallium nitride)-on-silicon technologies for power switching…


TRENCHSTOP IGBT 7 A Good Fit for Industrial Drives

TRENCHSTOP IGBT 7 A Good Fit for Industrial Drives

This article discusses IGBT7 Chip Technology and its benefits to variable-speed drive applications.


Arrow Electronics Appointed by GaN Systems to Supply High-Efficiency Power Products

Arrow Electronics Appointed by GaN Systems to Supply High-Efficiency Power Products


News Sep 19, 2018 by Paul Shepard
650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

GaN Microelectronics for Next-Gen Military and Communications Systems

GaN Microelectronics for Next-Gen Military and Communications Systems

H-bridge Driver IC Supporting 1.8V Low-Voltage and 1.6A Large-Current Drive

H-bridge Driver IC Supporting 1.8V Low-Voltage and 1.6A Large-Current Drive

Gaining Speed: Mitsubishi Electric SiC-Power Modules

Gaining Speed: Mitsubishi Electric SiC-Power Modules

The article focuses on high-voltage SiC-modules and gives insights to features and applications.


ECPE Partners with Japanese Researchers on ISOGap and SiC-DCBreaker WBG Projects

ECPE Partners with Japanese Researchers on ISOGap and SiC-DCBreaker WBG Projects


News Sep 14, 2018 by Paul Shepard
650-Volt SiC Power Schottky Rectifier Series Lowers System Costs

650-Volt SiC Power Schottky Rectifier Series Lowers System Costs

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

Thick-Film Chip Resistors Feature 3X Higher Power Rating

Thick-Film Chip Resistors Feature 3X Higher Power Rating

LLC Current-Resonant Controller IC with Built-in Full Protection Functions

LLC Current-Resonant Controller IC with Built-in Full Protection Functions

600-V 70mΩ GaN Power Stage with Integrated Driver and Protection

600-V 70mΩ GaN Power Stage with Integrated Driver and Protection

Low-Power Analog Neural Networks for Voice, Sensor and Video Applications

Low-Power Analog Neural Networks for Voice, Sensor and Video Applications


News Sep 10, 2018 by Paul Shepard
Full-SiC 1200V 500A Low Inductance H-Bridge  Phase-leg Module in Standard Footprint

Full-SiC 1200V 500A Low Inductance H-Bridge Phase-leg Module in Standard Footprint

This article features Proton-Electrotex MCDA – an advanced 1200V full-SiC module in well-known footprint, featuring an ultra-low inductance…


Harley-Davidson Opens Advanced Technology R&D Facility in Silicon Valley

Harley-Davidson Opens Advanced Technology R&D Facility in Silicon Valley


News Sep 08, 2018 by Paul Shepard