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Efficient Power Conversion CEO and CoFounder Inducted into the ISPSD Hall of Fame 2019

Efficient Power Conversion CEO and CoFounder Inducted into the ISPSD Hall of Fame 2019

EPC Corporation proudly announces that Dr. Alex Lidow, CEO and co-founder, is inducted into the ISPSD Hall of Fame 2019.


new products May 15, 2019 by EPC
A Reverse Conducting IGCT Optimized for Medium Switching Frequency Applications

A Reverse Conducting IGCT Optimized for Medium Switching Frequency Applications

This article highlights ABB Semiconductors Reverse-Conducting Integrated Gate Commuted Thyristors platform or RC-IGCT in high power semiconductor…


Cree Closes Sale of Cree Lighting to Ideal Industries

Cree Closes Sale of Cree Lighting to Ideal Industries


News May 14, 2019 by Scott McMahan
Vanadium Iodine Found to be 2D Ferromagnetic Semiconductor

Vanadium Iodine Found to be 2D Ferromagnetic Semiconductor


News May 14, 2019 by Scott McMahan
Cree Selected as Silicon Carbide Partner for the Volkswagen Group FAST Program

Cree Selected as Silicon Carbide Partner for the Volkswagen Group FAST Program

Cree, Inc. has been selected as the exclusive silicon carbide partner for the Volkswagen Group’s “Future Automotive Supply Tracks” Initiative…


new products May 14, 2019 by Cree
Soitec’s EpiGaN Acquisition Expands GaN Substrate Portfolio

Soitec’s EpiGaN Acquisition Expands GaN Substrate Portfolio


News May 13, 2019 by Scott McMahan
With ActiveSemi Acquisition, Qorvo Poised to Benefit from Growth Trends in 5G, IoT, and GaN

With ActiveSemi Acquisition, Qorvo Poised to Benefit from Growth Trends in 5G, IoT, and GaN


News May 13, 2019 by Scott McMahan
The Next Generation of High Power IGBT Modules

The Next Generation of High Power IGBT Modules

This article highlights Mitsubishi Electric Europe B.V LV100 High Power IGBT Modules for Wind Converter, Photovoltaic Inverter and Motor Drives.


Simulation Tool Facilitates Analog & High Voltage Design Implementation

Simulation Tool Facilitates Analog & High Voltage Design Implementation


News May 10, 2019 by Scott McMahan
50mA Adjustable LDO and Configurable Logic Gates Rated from -55°C to +175°C

50mA Adjustable LDO and Configurable Logic Gates Rated from -55°C to +175°C

600A / 500V GaN Half Bridge Development Platform

600A / 500V GaN Half Bridge Development Platform


News May 09, 2019 by Paul Shepard
AC-DC Converter ICs with Built-In 1700V SiC MOSFET Target Industrial Equipment

AC-DC Converter ICs with Built-In 1700V SiC MOSFET Target Industrial Equipment

Imec Demonstrates Monolithic GaN Half-Bridge with Drivers in 48-V to 1-V Buck

Imec Demonstrates Monolithic GaN Half-Bridge with Drivers in 48-V to 1-V Buck


News May 08, 2019 by Paul Shepard
Infineon Begins High-Volume Production of 1200V and 650V SiC MOSFETs

Infineon Begins High-Volume Production of 1200V and 650V SiC MOSFETs

Exagan Opens Power Solutions Center

Exagan Opens Power Solutions Center


News May 08, 2019 by Scott McMahan
650V SiC FETs Offer Same Voltage Drop-in Replacement

650V SiC FETs Offer Same Voltage Drop-in Replacement

3-Phase PFC Module with SiC Diodes Steps Up Power Density

3-Phase PFC Module with SiC Diodes Steps Up Power Density

Potential of Wide Bandgap Semiconductors in Power Electronic Applications

Potential of Wide Bandgap Semiconductors in Power Electronic Applications

This article highlights ECPE Wide Bandgap User Forum with the introduction and the usage of SiC and GaN devices in power electronic systems.


Leading-Edge Power Modules for the New Era in Traction Converters

Leading-Edge Power Modules for the New Era in Traction Converters

This article highlights Infineon Power Modules development for traction applications particularly in energy-efficiency and emission-free…


8 x 8 mm 0.7mΩ / 40V MOSFET Family Delivers up to 48x Power Density

8 x 8 mm 0.7mΩ / 40V MOSFET Family Delivers up to 48x Power Density