This article highlights NIC Components NCST-C series of current sensing SMT chip resistors utilizing low-cost thick film construction.
This article highlights NIC Components NCST-C series of current sensing SMT chip resistors utilizing low-cost thick film construction.
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving…
Dual-MOSFET devices simplify automotive solenoid control circuits by saving space, reducing component count and improving reliability.
Melexis, a microelectronics company based in Belgium, has released a second generation medium-speed current sensor, the…
Melexis, a microelectronics company based in Belgium, has released a second generation medium-speed current sensor, the MLX91211 IC line.
What will the beginning of 2021 look like and how could the power and semiconductor industries be affected?
What will the beginning of 2021 look like and how could the power and semiconductor industries be affected?
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
The new kits are designed to give designers a first hand look at the benefits of gallium nitride semiconductors
AEC-Q101 qualified single and dual N-channel trench MOSFETs feature 175° T j rating, wettable flank PDFN package and…
AEC-Q101 qualified single and dual N-channel trench MOSFETs feature 175° T j rating, wettable flank PDFN package and 100% compliance with…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration…
GaN Systems announced today a new 100V High-Speed, Half-Bridge Evaluation Board (GS-EVB-HB-61008P-ON) in collaboration with ON Semiconductor.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
UnitedSiC’s gen 4 technology enables enhanced figures of merit.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
Würth Elektronik presents its WE-AGDT transformers for SiC MOSFET gate drivers.
ON Semiconductor (ONSemi) has launched four auxiliary power supply solutions that are able to deliver 800V and 400V to…
ON Semiconductor (ONSemi) has launched four auxiliary power supply solutions that are able to deliver 800V and 400V to electric vehicles (EVs) and…
ROHM’s newly developed VCSEL technology achieves greater accuracy in spatial recognition and distance measuring systems…
ROHM’s newly developed VCSEL technology achieves greater accuracy in spatial recognition and distance measuring systems by using Time Of Flight…
This article highlights Maxim Integrated MAX17320 2 to 4 series cell Li-ion fuel gauge IC as the industry’s first to…
This article highlights Maxim Integrated MAX17320 2 to 4 series cell Li-ion fuel gauge IC as the industry’s first to monitor self-discharge…
The compact 5 by 6 mm device is said to be the first of its type to feature AEC-Q101 qualification
The compact 5 by 6 mm device is said to be the first of its type to feature AEC-Q101 qualification
This article gives insight into testing for shoot-through half-bridge power converters and the influence of parasitic…
This article gives insight into testing for shoot-through half-bridge power converters and the influence of parasitic coupling capacitance.
Cree is selling its LED business unit for $300 million, the latest move in its long-term strategy for SiC and RF growth.
Cree is selling its LED business unit for $300 million, the latest move in its long-term strategy for SiC and RF growth.
This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET…
This article provides an example of the benefits of integrated GaN power ICs via the introduction of an integrated FET and gate driver IC.
The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size
The new unit leads the pack with greater reliability and efficiency at a lower cost point and at a smaller size
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the…
German semiconductor manufacturer, Infineon, signed an agreement with GT Advanced Technologies (GTAT) last week for the supply of silicon carbide…
The new Super Junction MOSFETS, feature a 115 mm2 footprint, fully 23% smaller than that of D2PAK devices
The new Super Junction MOSFETS, feature a 115 mm2 footprint, fully 23% smaller than that of D2PAK devices
The new unit is complete in a single TO-263 package, replacing the multiple discrete components otherwise required
The new unit is complete in a single TO-263 package, replacing the multiple discrete components otherwise required
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