This article highlights Infineon 1EDS20I12SV and a conventional gate driver IC, which gate drivers are operated by FF1200R12IE5 1200A/1200V power…
This article highlights Infineon 1EDS20I12SV and a conventional gate driver IC, which gate drivers are operated by FF1200R12IE5 1200A/1200V power…
This article features JSC Proton-Electrotex high voltage thyristors for addressing the possibility of forming built-in…
This article features JSC Proton-Electrotex high voltage thyristors for addressing the possibility of forming built-in overvoltage self-protection…
Three New Building-Block Analog ICs from Maxim Integrated at the electronica 2018 conference
Three New Building-Block Analog ICs from Maxim Integrated at the electronica 2018 conference
IGBT based power modules are used for a wide power range and voltage range. This article discusses system considerations,…
IGBT based power modules are used for a wide power range and voltage range. This article discusses system considerations, effects to the power…
This article highlights TDK Corporation ceramic EPCOS inrush current limiters (ICLs), based on NTC and PTC thermistors…
This article highlights TDK Corporation ceramic EPCOS inrush current limiters (ICLs), based on NTC and PTC thermistors as strong duo used in…
This article highlights Hitachi Europe, Ltd. introduction of nHPD2 Power Modules as the first high-voltage IGBT-based…
This article highlights Hitachi Europe, Ltd. introduction of nHPD2 Power Modules as the first high-voltage IGBT-based power module for traction, etc..
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a…
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.
Facebook
Google
GitHub
Linkedin