Wolfspeed expands its innovative C3M™ platform by introducing a 1200V, 75mΩ MOSFET in low-inductance discrete packaging
Wolfspeed expands its innovative C3M™ platform by introducing a 1200V, 75mΩ MOSFET in low-inductance discrete packaging
This article presents a new alternative, H6.5, and briefly discusses operating principles, and benchmarks H-bridge, H6.5…
This article presents a new alternative, H6.5, and briefly discusses operating principles, and benchmarks H-bridge, H6.5 and HERIC® topologies.
This article discusses the new standard dual-module package specially developed for High Voltage IGBTs HVIGBTs used in…
This article discusses the new standard dual-module package specially developed for High Voltage IGBTs HVIGBTs used in railway applications.
This article demonstrate the next step in device evolution can be achieved by combining the ET-IGBT MOS cell and the BIGT…
This article demonstrate the next step in device evolution can be achieved by combining the ET-IGBT MOS cell and the BIGT integration structure.
This article discusses the 62nd annual IEEE International Electron Devices Meeting that was held in San Francisco,…
This article discusses the 62nd annual IEEE International Electron Devices Meeting that was held in San Francisco, California, USA.
In 2014 Dielectric Laboratories (DLI), Novacap, Syfer Technology and Voltronics came together into a single organisation,…
In 2014 Dielectric Laboratories (DLI), Novacap, Syfer Technology and Voltronics came together into a single organisation, Knowles Capacitors. With…
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