This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be…
This article describes how Transphorm Inc. developed a 63 mOhm 600V GaN HEMT (high electron mobility transistor) to be packaged in a TO-247.
Mersen has accepted Google’s “Little Box Challenge” to design a power inverter that is about 10 times smaller than…
Mersen has accepted Google’s “Little Box Challenge” to design a power inverter that is about 10 times smaller than what is available today.
A great time has come to an end for the partner consortium in the German publically funded research project…
A great time has come to an end for the partner consortium in the German publically funded research project BMBF-ProPower. These three years of…
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an…
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an advanced SiC manufacturing…
This article describes the factors that have driven the evolution of distributed power architectures of HF DC-DC…
This article describes the factors that have driven the evolution of distributed power architectures of HF DC-DC converter modules and offers…
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