Next-Generation SiC Platform for 6-inch Wafers

July 20, 2017 by Paul Shepard

GT Advanced Technologies Corporation announced that it has launched for commercial sale a silicon carbide production solution with a stable and repeatable process, capable of producing high-quality, semiconductor grade, six-inch silicon carbide boules. With this breakthrough, the company now offers a complete silicon carbide production solution capable of achieving industry leading cost points.

The company offers its SiClone™200 furnace, a production-ready sublimation furnace, along with process technology, hot zones, and technical support to companies wishing to produce silicon carbide boules and wafers.

"This is an important milestone for the company and the power electronics industry," said Greg Knight, CEO at GT Advanced Technologies. "Our crystal growth experts have worked hard to achieve a repeatable, high-yield process technology for producing high quality silicon carbide boules. Much of the world's silicon carbide production remains captive, which limits supply and keeps prices high.

“Our silicon carbide solution will help to increase the availability of silicon carbide semiconductors at significantly lower costs by increasing supply as production increases.  We view this as a key step in enabling new high power semiconductor applications targeting market verticals such as electric vehicles and next generation PV inverters,” concluded Knight.

GT has a long history with developing silicon carbide equipment and solutions going back more than 15 years. The company pioneered the growth of two and four-inch silicon carbide boules in its SiClone sublimation furnaces. The company is well positioned to offer production-ready solutions with technology covering the entire production process.