80V, 20mΩ, GaN FET with 47A Pulsed Current Rating Gains AEC Q101 Qualification

April 17, 2019 by Scott McMahan

Efficient Power Conversion (EPC) reported the successful AEC Q101 qualification of the 80V EPC2214 that the company created for lidar systems in the automotive applications and other harsh environments. The EPC2214 is an 80V, 20mΩ, eGaN FET with a 47A pulsed current rating in a 1.8 mm2 footprint.

Typical applications for the eGaN FET include lidar and other pulsed-current purposes, dc-dc conversion, and wireless power transfer.

This new device, the 80V EPC2214, has completed stringent automotive AEC Q101 qualification testing, and EPC plans to follow the device's introduction with several more integrated circuits and discrete transistors for the harsh automotive environment.

GaN Performance

The device enables higher switching frequency due to lower switching losses and lower drive power. Its higher efficiency results from zero reverse recovery losses (QRR) as well as lower conduction and switching losses. A smaller footprint translates to a higher power density.

These GaN performance characteristics result in a device that can handle tasks that benefit from very high switching frequency, and low on-time as well as those where on-state losses dominate.

According to EPC, the new GaN FET is suited for firing the lasers in lidar systems because the FET can be triggered to produce high-current with extremely short pulse widths. The short pulse width results in higher resolution. The higher pulse current translates to increased range, which lets the lidar system discern objects at greater distances.

These two traits, along with their tiny size and low cost, also make the company's eGaN FETs suitable for radar and ultrasonic sensors in addition to lidar in demanding automotive applications.

AEC Q101 Qualification

To complete AEC Q101 qualification, EPC's eGaN FETs underwent rigorous environmental and bias-stress testing, including humidity testing with bias (H3TRB), temperature cycling (TC), high-temperature reverse bias (HTRB), and high-temperature gate bias (HTGB), as well as several other tests.

Notably, EPC's WLCS packaging passed all the same testing standards for conventionally packaged parts, demonstrating that the superior performance of GaN-based chip-scale packaging does not compromise ruggedness or reliability.

EPC produces its eGaN devices in facilities certified to the Automotive Quality Management System Standard IATF 16949.

EPC's CEO and co-founder Alex Lidow notes, "This new automotive product is the most recent in what will be a constant stream of EPC transistors and integrated circuits designed to enable autonomous driving and improve fuel economy and safety. Our eGaN technology is faster, smaller, more efficient, lower cost, and more reliable than the aging silicon power MOSFET used in today's vehicles."

Price and Availability

The EPC2214 eGaN FET is available in 2.5Ku/reels and priced at $0.72 each, and the FET is available for immediate delivery from Digi-Key.