100-V Enhancement-Mode eGaN FETs Evaluated Faster with New Development Board

March 14, 2013 by Jeff Shepard

Efficient Power Conversion Corporation (EPC) now offers the EPC9010 development board to make it easier for engineers to start designing with a 100-V enhancement-mode gallium-nitride (eGaN) field effect transistor (FET) in applications such as high-speed dc-dc power supplies, point-of-load converters, class-D audio amplifiers, hard-switched and high-frequency circuits.

The EPC9010 development board is a 100-V maximum device voltage, 7-A maximum output current, half bridge with onboard gate drives, featuring the EPC2016 eGaN FET. This new development board greatly simplifies the evaluation process of eGaN FETs by including all the critical components on a single board that can be easily connected into any existing converter.

The EPC9010 development board is 2” x 1.5” and contains not only two EPC2016 eGaN FET in a half-bridge configuration using the LM5113 gate driver from Texas Instruments, as well as supply and bypass capacitors. The board contains all critical components and layout for optimal switching performance. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.

A Quick Start Guide is included with the EPC9010 development board for reference and ease of use. EPC9010 development boards are priced at $99.00 each and are available for immediate delivery.