Vishay Releases 80V MOSFET with On-Resistance Specified at 4.5V Gate Drive

Vishay Intertechnology, Inc. unveiled the first TrenchFET® power MOSFET built on a new low-on-resistance technology optimized for higher-voltage devices. Vishay says that the new ThunderFET™ SiR880DP is the first 80V power MOSFET with an on-resistance rating at a 4.5V gate drive. Packaged in the thermally enhanced PowerPAK® SO-8, the new 80-V SiR880DP offers ultra-low on-resistances of 8.5mΩ at 4.5V, 6.7mΩ at 7.5V, and 5.9mΩ at 10V. Typical on-resistance times gate charge, a key figure of merit (FOM, expressed in nC-mΩ) for MOSFETs in dc-dc converter applications, is 161 at 4.5V.

The SiR880DP is optimized for primary side switching in isolated do-to-dc converters for telecom point-of-load applications. Its very low on-resistance translates into reduced power consumption and greener solutions, especially at light loads such as stand-by mode.

The device’s 4.5V rating is conducive to higher-frequency designs, enabling significantly lower gate drive losses in POL applications while allowing lower-voltage/lower-cost 5V PWM ICs to be utilized. Until now, 80V power MOSFETs were only available with on-resistance ratings at a 6V gate drive or higher.

The SiR880DP is 100% Rg- and UIS-tested. The PowerPAK SO-8 MOSFET is halogen-free according to the IEC 61249-2-21 definition and compliant to RoHS Directive 2002/95/EC.

Samples of the SiR880DP are available now. Production quantities are available now, with lead times of 16 weeks for large orders.