UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, recently announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package. The FAST Series offers increased switching speeds and higher efficiency levels than their existing UJC3 Series.
Based on UnitedSiC’s proprietary cascode configuration, this new series provides higher switching speeds while at the same time offering a ‘drop-in’ replacement solution for most TO-247-3L IGBT, Si-MOSFET and SiC-MOSFET parts. This means system upgrades for greater performance and efficiency can be performed without requiring changes to the existing gate drive circuitry. Turn-on losses can be reduced based on a 50 percent reduction in Qrr. For high current use, a small, low-cost RC snubber is required, which also simplifies EMI design.
Applications suitable for use with the UF3C FAST series include the full range of hard switched circuits such as active rectifiers and totem-pole PFC stages, commonly used in EV charging, telecom rectifiers and server supplies.
Built on UnitedSiC’s Gen-3 SiC transistor technology, the UF3C FAST series integrates a faster SiC JFET with a custom-designed Si-MOSFET to produce the ideal combination of normally-OFF operation, a high-performance body diode and easy gate drive of the MOSFET. Compared with other wide band-gap technologies, the SiC cascode devices support standard 12 V gate drive and have assured avalanche ratings (100 percent production-tested).
“UnitedSiC’s new FAST SiC FET range is simple to use and offer a great cost-performance option,” said Anup Bhalla, VP Engineering at UnitedSiC. “The range offers design engineers the opportunity to extract even higher levels of efficiency from high-power designs.”
The range includes the following part numbers: UF3C120040K3S (1200V / 35mΩ), UF3C065030K3S (650V / 30mΩ) and UF3C065040K3S (650V / 42mΩ).
Datasheets and a SiC FET user guide are available and include recommended RC snubber values tested by UnitedSiC for optimal performance.
UnitedSiC develops innovative silicon carbide FET and diode power semiconductors that deliver the industry’s best SiC efficiency and performance for electric vehicle (EV) chargers, DC-DC converters and traction drives, as well as telecom/server power supplies, variable-speed motor drives, and solar PV inverters.