Toshiba IGBT/MOSFET Gate Drive Photocoupler Features 500ns Propagation Delay

Toshiba Corporation has launched a DIP8-package IC coupler that can directly drive a middle-capacity IGBT or power MOSFET. The new TLP250H offers a maximum propagation delay time of 500ns and a propagation delay skew between photocouplers of 150ns, a performance that will reduce dead time and improve efficiency in inverter circuits.

The use of a new LED with superior longevity supports a wide operating temperature range, between -40°C and 125°C. In addition, the coupler contributes to lower power consumption by reducing the operating voltage to 10V (min.) against 15V (min.) for Toshiba's previous model. It can be used in a wide range of products, including industrial devices used in high temperature environments, home solar photovoltaic power generation systems, digital products and measuring and control instruments. Samples are available now with mass production scheduled for February.

Applications for the TLP250H are expected to include: IGBT/power MOSFET gate drivers, power conditioners, general-purpose inverters, IH (Induction Heating) equipment, etc. Key features of the device include: Operating power-supply voltage: VCC=10 to 30V; Propagation delay time: tpLH, tpHL=500ns (Max); Propagation delay skew: ±150ns (Max); Wide guaranteed operating temperature range: Topr=-40°C to 125°C; Peak output current: IOP=±2.5A (Max); Low input current: IFLH=5mA (Max); Isolation voltage: BVS=5000Vrms (Min); and common mode transient immunity, CMR=±40kV/µs.