New Industry Products

Microsemi Launches High Performance Power MOS 8 Ultra Fast FREDFETs

March 22, 2007 by Jeff Shepard

Microsemi Corp. has launched their first high performance Ultra Fast FREDFETs (H-FREDFETs) to their latest generation POWER MOS 8™ product line. The new MOS 8 H-FREDFET devices are designed for a broad range of 500 and 600V high performance applications including ac-dc offline power supplies, motor drivers, server and telecom power systems, solar inverters, single- and three-phase arc welding and plasma cutting equipment, battery chargers, semiconductor capital equipment, induction heating, and medical equipment such as magnetic resonant imaging (MRI) and computerized axial tomography (CT).

Advanced manufacturing processes for all the new MOS 8 products have lowered their thermal resistance and enabled higher current ratings for each die size and package type compared to earlier devices. Low capacitance and gate charge specifications enable high switching frequency capability and low switching losses. These devices provide significant additions to Microsemi’s current Power MOS 5® and Power MOS 7® technology.

"Our new POWER MOS 8 family utilizes advanced technologies and manufacturing processes to deliver what our customers have asked for in our new generation of MOSFETs, FREDFETs, and H-FREDFETs," said Russell Crecraft, Vice President and General Manager of Microsemi’s Power Products Group in Bend, Oregon. "Our Power MOS 8 family offers the industry’s broadest range of high voltage, high power, high performance MOSFETs, FREDFETs, H-FREDFETs and PT IGBTs."

MOS 8 H-FREDFETs have all of the features and advantages of MOS 8 FREDFETs, with continued low RDS(on) and the added benefit of a faster body diode recovery speed of less than or equal to 200ns. These devices provide superior ruggedness and reliability in applications where the body diode carries forward current, such as the popular zero voltage switching (ZVS) bridge topologies. All MOS 8 H-FREDFET devices are 100% tested for avalanche energy capability and are offered only in RoHS compliant packages.

The POWER MOS 8 family now includes ten H-FREDFET devices with power ratings from 23 to 97A, 500 and 600V. MOS 8 technology utilizes a simplified manufacturing process that significantly lowers costs compared to previous Microsemi power MOSFET products. Pricing at 1K quantities ranges from $3.37 to $9.23 for TO-247 packages and $22.51 to $39.71 for SOT-227 packages.