IXYS Unveils MOSFET Solution with Silicon Carbide Technology in an Isolated Integrated Package

XYS Corp. announced the successful integration of Silicon Carbide (SiC) technology and the latest super junction MOSFET technology into a single package enabling increased power density and higher efficiency in fast switching power supplies and solar inverter applications.

"Currently the system designers in high frequency, high efficiency applications are forced to consider using separate discrete devices, often from different suppliers complicating mechanical layouts and time to market. The MKE range of products released by IXYS effectively integrates these technologies into one part thereby reducing parasitic inductance and its associated losses," said Bradley Green, VP of International Sales for IXYS. "Our patented ISOPLUS i4 package, with its proven ruggedness based on the internal DCB construction, enables the co-location of the MOSFET and SiC diode thus also reducing real estate requirements in power switching topologies that are getting far more focused on not only reducing power losses but also challenging the traditional restraints on power supply size. It has better thermal impedance with lower weight than alternative solutions that use a heavier copper lead frame and bulky modules."

The company said the first product in the MKE range of devices is an ultrafast boost chopper which integrates a super junction COOLMOS CP MOSFET and a SiC boost diode integrated in the IXYS ISOPLUS i4 package.

The ISOPLUS technology gives the designer a discrete package with ceramic, Direct Copper Bonded (DCB) isolation. This isolation has low thermal impedance and a higher reliability in power cycling than standard copper based solutions and non-isolated products.