IR Presents New WARP2 NPT IGBTs

International Rectifier Corp. (IR, El Segundo, CA) introduced the new WARP2™ 600V/50A, 35A and 20A non-punch through (NPT) IGBTs with improved turn-off characteristics for high-current, high-frequency, switch-mode power supply (SMPS) circuits in telecom and server systems. The new WARP2 NPT IGBTs are co-packaged with HEXFRED® diodes, which enable better performance compared to the integral body diodes in power MOSFETs. The new devices are available in the TO-247 and TO-220 packages.

The new WARP2 IGBTs are made with IR's thin wafer technology, which ensures shorter minority carrier depletion time and faster turn-off. In addition, negligible turn-off tail current and low turn-off switching loss enable higher operating frequencies. The new IGBTs handle as much as 50A in the TO-247 package, which is 85 percent more current capacity compared to IR's 600V MOSFET in the same package, and up to 20A in TO-220 package, or 18 percent more current capacity compared to IR's 600V MOSFET in a TO-220 package.

The new high-frequency NPT IGBTs are available immediately. Pricing begins at $1.03 each for the IRGB20B60PD1 in 10,000-unit quantities.