Hard Switching 650V SiC FETs in TO220-3L Package
UnitedSiC has added two new TO220-3L package options to its growing range of hard-switching UF3C FAST series of 650V SiC FETs. The new products offer RDS(on) values of 30mΩ (UF3C065030T3S) and 80mΩ (UF3C065080T3S).
A sintered-silver packaging technology developed by UnitedSiC makes possible the enhanced thermal characteristics of the three-leaded industry-standard TO220-3L package.
The new devices are for those seeking more powerful performance in a 3-lead TO220 package option for applications including PV inverters, EV charging, switch-mode power supplies, power factor correction modules, motor drives, and induction heating.
Both of United SiC's new SiC FET products are based on the company's unique ‘cascode' circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The standard gate-drive characteristics of the FETs allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si superjunction devices on existing designs. Such replacements can result in performance increases with lower conduction and switching losses, enhanced thermal properties, and integrated gate ESD protection.
In new designs, the UnitedSiC FETs provide increased switching frequencies to gain substantial system benefits in efficiency, size reduction in size, and the cost of passive components such as magnetics and capacitors.
According to the company, the FAST Series devices feature not only ultra-low gate charge, but they also boast the best reverse recovery characteristics of any device of similar ratings. United SiC says when used with recommended RC-snubbers and any application requiring standard gate drive, these devices are excellent for switching inductive loads.
The UnitedSiC UF3C FAST SiC series, which now totals 14 devices, is available in a range of TO247-3L, TO247-4L, TO220-3L and D2PAK7-3L packages, with four 1200V and ten 650V options.
Features of UF3C065030T3S
- Typical on-resistance RDS(on),typ of 27mW
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
- Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
Features of UF3C065080T3S
- Typical on-resistance RDS(on),typ of 80mW
- Maximum operating temperature of 175°C
- Excellent reverse recovery
- Low gate charge
- Low intrinsic capacitance
- ESD protected, HBM class 2
- Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
Price and availability
Prices are $5.18 for the UF3C065080T3S, and $13.79 for the UF3C065030T3S each at 1,000 pcs quantities. Stock is available from UnitedSiC's global distribution partners Mouser and Richardson Electronics as well as local distributors.
