Gen III P-Channel FETs Claim Industry-Low On-Resistance in PowerPAK SC-70
Vishay Intertechnology, Inc. today extended its offering of TrenchFET® Gen III p-channel power MOSFETs in the ultra-compact PowerPAK® SC-70 package. Designed to save space and increase power efficiency in portable electronics, the Vishay Siliconix MOSFETs released today claim the industry's lowest on-resistance for -12V, -20V, and -30V (12V VGS and 20V VGS) devices at -4.5V and -10V gate drives in the 2-mm by 2-mm footprint area.
For load and battery switches in power management and control switches in synchronous buck converter applications for smartphones, tablet PCs, mobile computing devices, hard disk drives, and solid state drives, the -12V SiA467EDJ offers an extremely low on-resistance down to 13mΩ (-4.5V). The -20V SiA437DJ features values down to 14.5mΩ (-4.5V), and the -30V SiA449DJ, and SiA483DJ provide low on-resistance to 20mΩ (-10V) and 21mΩ (-10V), respectively. In addition, the SiA437DJ and SiA467EDJ feature a high 30A current rating for load switch applications with big inrush currents.
The devices' industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times, while their ultra-compact PowerPAK SC-70 package saves critical PCB space. For small point-of-load (POL) dc-dc and other synchronous buck applications, the MOSFETs' p-channel technology simplifies gate drive designs by eliminating the need for level-shifting circuitry or "bootstrap" devices. The SiA467EDJ, SiA437DJ, SiA449DJ, and SiA483DJ are 100 % Rg-tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU.
