800V / 80A High-Temperature SCR Thyristors

The latest addition to STMicroelectronics' offering of high-temperature SCR thyristors is also the first 800V, 80A surface-mount device, the TM8050H-8D3 housed in the high-voltage D3PAK (TO-268-HV). Designed for use in mid-power applications in the 1- to 10-kW range to leverage surface-mount assembly efficiencies and reduce PCB and heatsink sizes, enabling to miniaturize power modules for applications that demand high reliability in harsh conditions. The TO-247 package option – TM8050H-8W – is also available.

Key features of the TM8050H-8D3 include: High junction temperature of Tj = 150 degrees C; Blocking voltage, VDRM = VRRM = 800V; Nominal current, IT(RMS) = 80A; Gate triggering current, IGT max. = 50 mA; High noise immunity, dV/dt > 1 kV/µs; Surface mounted device D3 PAK; Increase of thermal margin due to extended Tj; and Low ID and IR in blocking state.

High-temperature thyristors, or silicon-controlled rectifiers (SCR), are designed for all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current-limiting circuits, capacitive discharge ignition and voltage regulation circuits. They are suited for automotive stationary battery charger, uninterruptible power supply, industrial power supply, motorbike voltage regulator and motor drive applications. Their voltage robustness up to 1200V, high noise immunity and power dissipation performance at 150 degrees C Tj are key features for functions such as ac switches, ac phasing inverters, and ac-dc controlled rectifier bridges.

Available in SMD and through-hole-isolated and non-isolated packages, ST's high-Tj SCRs feature: a very low gate-triggering current (600V SCRs only); a peak off-state voltage (blocking voltage) from 600V up to 1200V; a maximum on-state current from 12A to 50A; a maximum junction temperature of 150 degrees C.