The third-generation C3M MOSFET technology delivers up to 20% lower switching losses than competing silicon carbide…
The third-generation C3M MOSFET technology delivers up to 20% lower switching losses than competing silicon carbide MOSFETs and provides the lowest…
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
For the emerging mega-watt applications with SiC power devices, the proper validation of output chokes poses great challenges.
For the emerging mega-watt applications with SiC power devices, the proper validation of output chokes poses great challenges.
X-FAB expands its SiC capacity and adds new in-house epitaxy capabilities
X-FAB expands its SiC capacity and adds new in-house epitaxy capabilities
Facebook
Google
GitHub
Linkedin