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Cree to Invest $1 Billion to Expand Silicon Carbide Capacity

Cree to Invest $1 Billion to Expand Silicon Carbide Capacity


News May 07, 2019 by Paul Shepard
GaN Specialist Exagan Opens Power Solutions Center in Europe to Bring Electronics Manufacturers GaNs Performance over a Wide Range of Applications

GaN Specialist Exagan Opens Power Solutions Center in Europe to Bring Electronics Manufacturers GaNs Performance over a Wide Range of Applications

This article highlights Exagan exhibiting its versatile GaN-based product portfolio at this week’s PCIM Europe conference in Germany.


new products May 07, 2019 by Exagan
Pre-Switch Launches CleanWave 200kW SiC Automotive Inverter Evaluation System

Pre-Switch Launches CleanWave 200kW SiC Automotive Inverter Evaluation System

Pre-Switch, Inc., recently announced its CleanWave 200kW silicon carbide (SiC) automotive inverter evaluation system.


new products May 07, 2019 by Pre-Switch
GaN Power ICs with Integrated Current and Temperature Sensors

GaN Power ICs with Integrated Current and Temperature Sensors


News May 06, 2019 by Paul Shepard
Cree Well Positioned to Meet Growing SiC Demand

Cree Well Positioned to Meet Growing SiC Demand


News May 05, 2019 by Scott McMahan
High-Temperature Gate Driver Board for SiC MOSFET Power Modules

High-Temperature Gate Driver Board for SiC MOSFET Power Modules

1200V 75mΩ SiC-based Monolithic Transistor-Rectifier Power Device

1200V 75mΩ SiC-based Monolithic Transistor-Rectifier Power Device

SiC-based High-Voltage Input 40W Auxiliary Power Supply Eval Board

SiC-based High-Voltage Input 40W Auxiliary Power Supply Eval Board

WiBotic and GaN Systems to Demo High-Power Wireless Charging Solutions for Robots

WiBotic and GaN Systems to Demo High-Power Wireless Charging Solutions for Robots


News May 02, 2019 by Paul Shepard
Microchip adds 700V SiC MOSFETs plus 700V and 1200V SiC Schottkys

Microchip adds 700V SiC MOSFETs plus 700V and 1200V SiC Schottkys

ON Semiconductor Debuting AEC-Q100 650V SiC Hybrid IGBT at PCIM Europe

ON Semiconductor Debuting AEC-Q100 650V SiC Hybrid IGBT at PCIM Europe

GaNdalf New GaN-based PFC Reference Design Board With Highest Efficiency at Panasonic Industry Booth

GaNdalf New GaN-based PFC Reference Design Board With Highest Efficiency at Panasonic Industry Booth

Panasonic, Microchip, and Future Electronics are showcasing their latest technology collaboration in the field of bridgeless totem-pole power…


Transforming Power with Industry Leading Silicon Carbide Expertise and Capacity

Transforming Power with Industry Leading Silicon Carbide Expertise and Capacity


News Apr 30, 2019 by Paul Shepard
Highest Current Rated GaN Power Semiconductors at PCIM 2019

Highest Current Rated GaN Power Semiconductors at PCIM 2019


News Apr 30, 2019 by Paul Shepard
Firecomms Collaborating with Egrtech to Develop Highly Efficient SiC Gate Drivers

Firecomms Collaborating with Egrtech to Develop Highly Efficient SiC Gate Drivers


News Apr 29, 2019 by Paul Shepard
GaN Systems Shows Worlds Highest Current Rated GaN Power Semiconductors at PCIM 2019

GaN Systems Shows Worlds Highest Current Rated GaN Power Semiconductors at PCIM 2019

OTTAWA, Ontario, Canada, April 29, 2019 – GaN Systems, the global leader in gallium nitride (GaN) power semiconductors, will demonstrate the 650…


new products Apr 29, 2019 by GaN Systems
EMC Filters from SMP for Modern SiC and GaN Applications

EMC Filters from SMP for Modern SiC and GaN Applications

GaN Systems’ CEO Delivering PCIM Europe Keynote About GaN Hardware Innovations

GaN Systems’ CEO Delivering PCIM Europe Keynote About GaN Hardware Innovations


News Apr 27, 2019 by Scott McMahan
MACOM and Goertek Establish GaN-on-Si RF Joint Venture for China’s 5G Build Out

MACOM and Goertek Establish GaN-on-Si RF Joint Venture for China’s 5G Build Out


News Apr 26, 2019 by Scott McMahan
Richardson RFPD Introduces New Family of 650 V GaN E-HEMTs from GaN Systems

Richardson RFPD Introduces New Family of 650 V GaN E-HEMTs from GaN Systems

This article highlights Richardson RFPD GS-065-0xx-1-L devices which is the new Family of 650 V GaN E-HEMTs ideal for low power applications.