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Transphorm’s 600V GaN Power Conversion Adopted by Delta Electronics

Transphorm’s 600V GaN Power Conversion Adopted by Delta Electronics

News Nov 13, 2013 by Jeff Shepard
Silicon Carbide Bare Die up to 8000V from GeneSiC

Silicon Carbide Bare Die up to 8000V from GeneSiC

new products Nov 06, 2013 by Jeff Shepard
Monolithic Power Aims for Si / SiC Cost Parity within 4 Years

Monolithic Power Aims for Si / SiC Cost Parity within 4 Years

News Nov 04, 2013 by Jeff Shepard
Kyma Technologies Selected by ARPA-E for GaN Substrate Development

Kyma Technologies Selected by ARPA-E for GaN Substrate Development

News Nov 03, 2013 by Jeff Shepard
Avogy Gets Multiple DOE Awards to Develop Vertical GaN Transistors

Avogy Gets Multiple DOE Awards to Develop Vertical GaN Transistors

News Nov 03, 2013 by Jeff Shepard
Anvil Drops the Hammer on £1m to Develop Low-Cost SiC Power Devices

Anvil Drops the Hammer on £1m to Develop Low-Cost SiC Power Devices

News Oct 31, 2013 by Jeff Shepard
Toshiba Adds Lower-Current Devices to SiC Schottky Offering

Toshiba Adds Lower-Current Devices to SiC Schottky Offering

new products Oct 23, 2013 by Jeff Shepard
Soraa Gets More DOE Funding For Development of Bulk GaN Substrates

Soraa Gets More DOE Funding For Development of Bulk GaN Substrates

News Oct 22, 2013 by Jeff Shepard
650V SiC Schottky Improves Performance in High-power Industrial Applications

650V SiC Schottky Improves Performance in High-power Industrial Applications

new products Oct 14, 2013 by Jeff Shepard
GaN Systems appoints Vqdot as Applications Development Partner

GaN Systems appoints Vqdot as Applications Development Partner

News Oct 07, 2013 by Jeff Shepard
EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

new products Oct 02, 2013 by Jeff Shepard
Showa Denko to launch 6-inch SiC Epitaxial Wafers for Power Devices

Showa Denko to launch 6-inch SiC Epitaxial Wafers for Power Devices

News Sep 29, 2013 by Jeff Shepard
GaN-Resonant Project Launched by BMBF with 1.2 Million Euro Funding

GaN-Resonant Project Launched by BMBF with 1.2 Million Euro Funding

News Sep 25, 2013 by Jeff Shepard
EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

new products Sep 24, 2013 by Jeff Shepard
Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

new products Sep 24, 2013 by Jeff Shepard
RFMD Claims World’s First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

RFMD Claims World’s First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

News Sep 18, 2013 by Jeff Shepard
80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

new products Sep 18, 2013 by Jeff Shepard
Toshiba Expands Family of SiC Schottky Barrier Diodes

Toshiba Expands Family of SiC Schottky Barrier Diodes

new products Sep 18, 2013 by Jeff Shepard
EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

new products Sep 12, 2013 by Jeff Shepard
APEI-lead Team Developing SiC and GaN Traction Drive Systems

APEI-lead Team Developing SiC and GaN Traction Drive Systems

News Sep 08, 2013 by Jeff Shepard