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GaN-Resonant Project Launched by BMBF with 1.2 Million Euro Funding

GaN-Resonant Project Launched by BMBF with 1.2 Million Euro Funding

News Sep 25, 2013 by Jeff Shepard
EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

EPC Blurs the Line Between Power and RF Transistors with new Multi-GHz GaN Devices

new products Sep 24, 2013 by Jeff Shepard
Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

Bipolar Power Transistor Rivals MOSFET Energy Efficiency in Space-Saving Outline

new products Sep 24, 2013 by Jeff Shepard
RFMD Claims World’s First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

RFMD Claims World’s First 6-Inch GaN-on-SiC Wafers for RF Power Transistors

News Sep 18, 2013 by Jeff Shepard
80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

new products Sep 18, 2013 by Jeff Shepard
Toshiba Expands Family of SiC Schottky Barrier Diodes

Toshiba Expands Family of SiC Schottky Barrier Diodes

new products Sep 18, 2013 by Jeff Shepard
EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

new products Sep 12, 2013 by Jeff Shepard
APEI-lead Team Developing SiC and GaN Traction Drive Systems

APEI-lead Team Developing SiC and GaN Traction Drive Systems

News Sep 08, 2013 by Jeff Shepard
Imec and Veeco to Collaborate on Production of GaN-on-Si Devices

Imec and Veeco to Collaborate on Production of GaN-on-Si Devices

News Sep 02, 2013 by Jeff Shepard
Improved Tandem Diodes from STMicro Offered as Economical Alternative to SiC

Improved Tandem Diodes from STMicro Offered as Economical Alternative to SiC

new products Sep 02, 2013 by Jeff Shepard
Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

new products Aug 29, 2013 by Jeff Shepard
IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

new products Aug 26, 2013 by Jeff Shepard
3 Days of GaN, SiC and GaAs Power Semis at DPF ‘13

3 Days of GaN, SiC and GaAs Power Semis at DPF ‘13

News Aug 11, 2013 by Jeff Shepard
Cree Licenses GaN Device Patents to Transphorm

Cree Licenses GaN Device Patents to Transphorm

News Aug 04, 2013 by Jeff Shepard
GaN Systems appoints Larry Spaziani as VP, Product Management

GaN Systems appoints Larry Spaziani as VP, Product Management

News Jul 23, 2013 by Jeff Shepard
Delta Elektronika uses Cree SiC FETs in Next-Gen High-Efficiency Power Supplies

Delta Elektronika uses Cree SiC FETs in Next-Gen High-Efficiency Power Supplies

News Jul 21, 2013 by Jeff Shepard
Fujitsu Beginning to Sample 150V GaN Power Device, Production Scheduled for 2014

Fujitsu Beginning to Sample 150V GaN Power Device, Production Scheduled for 2014

new products Jul 10, 2013 by Jeff Shepard
IR and EPC Reach Settlement and Royalty Agreement Related to GaN Power

IR and EPC Reach Settlement and Royalty Agreement Related to GaN Power

News Jun 25, 2013 by Jeff Shepard
US Government Honors Raytheon for GaN Innovations

US Government Honors Raytheon for GaN Innovations

News Jun 12, 2013 by Jeff Shepard
Nitronex Introduces 48V GaN-on-Si Power Transistors

Nitronex Introduces 48V GaN-on-Si Power Transistors

new products Jun 03, 2013 by Jeff Shepard