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SiC MOSFETs Rated for 200 Degrees C from STMicro

SiC MOSFETs Rated for 200 Degrees C from STMicro

Cree extends Benefits of SiC Diodes to MW-Class Power Systems

Cree extends Benefits of SiC Diodes to MW-Class Power Systems

Driver ICs target GaN and SiC Power Transistors

Driver ICs target GaN and SiC Power Transistors

Vincotech adds SiC Modules for Advanced Power Conversion

Vincotech adds SiC Modules for Advanced Power Conversion

GaN Systems appoints Tony Astley as Director European Operations

GaN Systems appoints Tony Astley as Director European Operations


News Feb 18, 2014 by Jeff Shepard
Powerex SiC Modules Attain RoHS Compliance

Powerex SiC Modules Attain RoHS Compliance

MACOM Acquires Nitronex Gets GaN-on-Si Technology

MACOM Acquires Nitronex Gets GaN-on-Si Technology


News Feb 13, 2014 by Jeff Shepard
High-Current GaN Development Board Features Multiple Half-Bridges in Parallel

High-Current GaN Development Board Features Multiple Half-Bridges in Parallel


News Feb 02, 2014 by Jeff Shepard
GaN Wafers from Ammono to be used in Two ARPA-E Projects

GaN Wafers from Ammono to be used in Two ARPA-E Projects


News Jan 22, 2014 by Jeff Shepard
U.K.‘s IQE Gets $4 million to Supply GaN Epi Wafers to U.S. Consortium

U.K.‘s IQE Gets $4 million to Supply GaN Epi Wafers to U.S. Consortium


News Jan 16, 2014 by Jeff Shepard
RFMD Teams With NC State to Speed Development of GaN Power Devices

RFMD Teams With NC State to Speed Development of GaN Power Devices


News Jan 14, 2014 by Jeff Shepard
650V SiC Diodes from STMicro Offered in Unique Dual Configurations

650V SiC Diodes from STMicro Offered in Unique Dual Configurations

Highly-Integrated 225 Degrees C Isolated Gate Driver for SiC Power Switches

Highly-Integrated 225 Degrees C Isolated Gate Driver for SiC Power Switches

Mitsubishi to Launch Railcar Traction Inverter with All-SiC Power Module

Mitsubishi to Launch Railcar Traction Inverter with All-SiC Power Module

High-Temperature SiC Junction Transistors in Hermetic Packages

High-Temperature SiC Junction Transistors in Hermetic Packages

Monolithic DC-DC Drives 1A Load with no External Transistor Needed

Monolithic DC-DC Drives 1A Load with no External Transistor Needed

Split-Output Topology Improves Dynamic Behavior in SiC MOSFET Modules

Split-Output Topology Improves Dynamic Behavior in SiC MOSFET Modules

Transphorm and Fujitsu to Integrate GaN Power Device Businesses

Transphorm and Fujitsu to Integrate GaN Power Device Businesses


News Dec 01, 2013 by Jeff Shepard
Soraa Expands Its GaN-on-GaN Manufacturing Operations In U.S.

Soraa Expands Its GaN-on-GaN Manufacturing Operations In U.S.


News Nov 20, 2013 by Jeff Shepard
SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints