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Highly-Integrated 225 Degrees C Isolated Gate Driver for SiC Power Switches

Highly-Integrated 225 Degrees C Isolated Gate Driver for SiC Power Switches

new products Jan 07, 2014 by Jeff Shepard
Mitsubishi to Launch Railcar Traction Inverter with All-SiC Power Module

Mitsubishi to Launch Railcar Traction Inverter with All-SiC Power Module

new products Dec 25, 2013 by Jeff Shepard
High-Temperature SiC Junction Transistors in Hermetic Packages

High-Temperature SiC Junction Transistors in Hermetic Packages

new products Dec 15, 2013 by Jeff Shepard
Monolithic DC-DC Drives 1A Load with no External Transistor Needed

Monolithic DC-DC Drives 1A Load with no External Transistor Needed

new products Dec 09, 2013 by Jeff Shepard
Split-Output Topology Improves Dynamic Behavior in SiC MOSFET Modules

Split-Output Topology Improves Dynamic Behavior in SiC MOSFET Modules

new products Dec 05, 2013 by Jeff Shepard
Transphorm and Fujitsu to Integrate GaN Power Device Businesses

Transphorm and Fujitsu to Integrate GaN Power Device Businesses

News Dec 01, 2013 by Jeff Shepard
Soraa Expands Its GaN-on-GaN Manufacturing Operations In U.S.

Soraa Expands Its GaN-on-GaN Manufacturing Operations In U.S.

News Nov 20, 2013 by Jeff Shepard
SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

new products Nov 18, 2013 by Jeff Shepard
Transphorm’s 600V GaN Power Conversion Adopted by Delta Electronics

Transphorm’s 600V GaN Power Conversion Adopted by Delta Electronics

News Nov 13, 2013 by Jeff Shepard
Silicon Carbide Bare Die up to 8000V from GeneSiC

Silicon Carbide Bare Die up to 8000V from GeneSiC

new products Nov 06, 2013 by Jeff Shepard
Monolithic Power Aims for Si / SiC Cost Parity within 4 Years

Monolithic Power Aims for Si / SiC Cost Parity within 4 Years

News Nov 04, 2013 by Jeff Shepard
Kyma Technologies Selected by ARPA-E for GaN Substrate Development

Kyma Technologies Selected by ARPA-E for GaN Substrate Development

News Nov 03, 2013 by Jeff Shepard
Avogy Gets Multiple DOE Awards to Develop Vertical GaN Transistors

Avogy Gets Multiple DOE Awards to Develop Vertical GaN Transistors

News Nov 03, 2013 by Jeff Shepard
Anvil Drops the Hammer on £1m to Develop Low-Cost SiC Power Devices

Anvil Drops the Hammer on £1m to Develop Low-Cost SiC Power Devices

News Oct 31, 2013 by Jeff Shepard
Toshiba Adds Lower-Current Devices to SiC Schottky Offering

Toshiba Adds Lower-Current Devices to SiC Schottky Offering

new products Oct 23, 2013 by Jeff Shepard
Soraa Gets More DOE Funding For Development of Bulk GaN Substrates

Soraa Gets More DOE Funding For Development of Bulk GaN Substrates

News Oct 22, 2013 by Jeff Shepard
650V SiC Schottky Improves Performance in High-power Industrial Applications

650V SiC Schottky Improves Performance in High-power Industrial Applications

new products Oct 14, 2013 by Jeff Shepard
GaN Systems appoints Vqdot as Applications Development Partner

GaN Systems appoints Vqdot as Applications Development Partner

News Oct 07, 2013 by Jeff Shepard
EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

EPC Dev. Board Features Optimal Layout of Paralleled GaN FETs for Higher Currents

new products Oct 02, 2013 by Jeff Shepard
Showa Denko to launch 6-inch SiC Epitaxial Wafers for Power Devices

Showa Denko to launch 6-inch SiC Epitaxial Wafers for Power Devices

News Sep 29, 2013 by Jeff Shepard