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High-temperature SiC for Aerospace Power Conversion

High-temperature SiC for Aerospace Power Conversion


News Jul 30, 2014 by Jeff Shepard
Driver Integrated GaN Transistors Announced by Sanken

Driver Integrated GaN Transistors Announced by Sanken

Transphorm Demonstrates GaN Progress at Techno Frontier

Transphorm Demonstrates GaN Progress at Techno Frontier

10A and 20A Silicon Carbide Schottky Diodes

10A and 20A Silicon Carbide Schottky Diodes

A4WP-Compliant 35W Wireless Power Transfer with GaN

A4WP-Compliant 35W Wireless Power Transfer with GaN

GaN Widens the Performance Gap with the Silicon MOSFETs

GaN Widens the Performance Gap with the Silicon MOSFETs

German Researchers use SiC and GaN to Cut Energy Loss in Half

German Researchers use SiC and GaN to Cut Energy Loss in Half


News Jun 30, 2014 by Jeff Shepard
Wireless Power Demo Boards Operate at 6.78 MHz with GaN FETs

Wireless Power Demo Boards Operate at 6.78 MHz with GaN FETs

Move expands GaN Systems’ Headquarters Size by 3X

Move expands GaN Systems’ Headquarters Size by 3X


News Jun 24, 2014 by Jeff Shepard
Fifth-Generation 1200V SiC Schottky Diodes

Fifth-Generation 1200V SiC Schottky Diodes

AlN / GaN / GaAs / SiC Power Semis plus Smart Materials and the Smart Grid

AlN / GaN / GaAs / SiC Power Semis plus Smart Materials and the Smart Grid


News Jun 15, 2014 by Jeff Shepard
Fraunhofer ISE uses Cree 10kV SiC Devices in Experimental DC-DC

Fraunhofer ISE uses Cree 10kV SiC Devices in Experimental DC-DC


News Jun 04, 2014 by Jeff Shepard
Monolith Partners with X-FAB to offer SiC Power Devices by 2015

Monolith Partners with X-FAB to offer SiC Power Devices by 2015


News Jun 02, 2014 by Jeff Shepard
Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

SiC Power Modules offered with Choice or ROHM of Cree FETs

SiC Power Modules offered with Choice or ROHM of Cree FETs

650V and 100V GaN Transistors Announced

650V and 100V GaN Transistors Announced

IEEE PELS Webinar on Power GaN on 4 June

IEEE PELS Webinar on Power GaN on 4 June


News May 22, 2014 by Jeff Shepard
New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability


News May 21, 2014 by Jeff Shepard
600V GaAs Power Devices Unveiled at PCIM Europe

600V GaAs Power Devices Unveiled at PCIM Europe