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Monolith Partners with X-FAB to offer SiC Power Devices by 2015

Monolith Partners with X-FAB to offer SiC Power Devices by 2015


News Jun 02, 2014 by Jeff Shepard
Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

Toshiba Expands Line-up of 650V SiC Schottky Barrier Diodes

SiC Power Modules offered with Choice or ROHM of Cree FETs

SiC Power Modules offered with Choice or ROHM of Cree FETs

650V and 100V GaN Transistors Announced

650V and 100V GaN Transistors Announced

IEEE PELS Webinar on Power GaN on 4 June

IEEE PELS Webinar on Power GaN on 4 June


News May 22, 2014 by Jeff Shepard
New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

New Family of 1200V SiC FETs and 1700V SiC Schottky Launched

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability

Replacing Si IGBTs with SiC FETs Improves Efficiency and Reliability


News May 21, 2014 by Jeff Shepard
600V GaAs Power Devices Unveiled at PCIM Europe

600V GaAs Power Devices Unveiled at PCIM Europe

Wafer-Level Testing for  High-Current and High-Voltage GaN and SiC

Wafer-Level Testing for High-Current and High-Voltage GaN and SiC

HY-LINE now offering Transphorm 600V GaN Devices in Europe

HY-LINE now offering Transphorm 600V GaN Devices in Europe


News May 20, 2014 by Jeff Shepard
Major GaN Developments at PCIM

Major GaN Developments at PCIM

All-SiC 300A / 1.2kV Half-Bridge Module Doubles Power Density

All-SiC 300A / 1.2kV Half-Bridge Module Doubles Power Density

Mitsubishi  showing Hybrid SiC Power Modules at PCIM

Mitsubishi showing Hybrid SiC Power Modules at PCIM

Furukawa Electric Licenses GaN Patents to Transphorm and Makes Investment

Furukawa Electric Licenses GaN Patents to Transphorm and Makes Investment


News May 13, 2014 by Jeff Shepard
1.2KV SiC MOSFET in a MiniBLOC SOT-227

1.2KV SiC MOSFET in a MiniBLOC SOT-227

Record-Breaking 25mOhm SiC FETs to be on View in Cree Stand at PCIM Europe

Record-Breaking 25mOhm SiC FETs to be on View in Cree Stand at PCIM Europe

GaN Systems will tell “Why GaN Devices will replace Si IGBTs” at PCIM

GaN Systems will tell “Why GaN Devices will replace Si IGBTs” at PCIM

Discrete 650V SiC Rectifiers rated for 20A and 50A

Discrete 650V SiC Rectifiers rated for 20A and 50A

SiC Wafer Grading Structure proposed by Dow Corning

SiC Wafer Grading Structure proposed by Dow Corning

EPC to Present Multiple Papers on GaN Technology at PCIM 2014

EPC to Present Multiple Papers on GaN Technology at PCIM 2014