GaN Systems will tell “Why GaN Devices will replace Si IGBTs” at PCIM

GaN Systems, Inc. will be exhibiting at PCIM Europe next week in Nuremberg at Booth 523 in Hall 9. The company has selected this major European exhibition as the ideal platform to reveal its latest developments and make two major announcements on its gallium nitride power semiconductors. GaN Systems will make two major announcements: the forthcoming commercial availability of its GaN high current devices and 100V process qualification.

And Larry Spaziani is presenting a paper at the PCIM Conference entitled "Lateral GaN Transistors – A Replacement for IGBT devices in Automotive Applications" written by John Roberts, Chief Technical Officer GaN Systems. The paper explains the performance improvements that GaN devices achieve in drive train power requirements for hybrid and electric vehicles.

Worldwide, several groups of researchers are undertaking work on replacing Silicon IGBTs in these applications. Spaziani will present results achieved by GaN Systems’ devices, which are based on its unique Island Technology®™ IP. The presentation will include a comparison between the company’s products and competitive offerings.